Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Yu V Ozerin"'
Autor:
M. V. Koval’chuk, V. B. Mityukhlyaev, Yu. V. Ozerin, A. V. Rakov, V. V. Roddatis, V. P. Gavrilenko, M. N. Filippov, A. L. Vasil’ev, P. A. Todua
Publikováno v:
Russian Microelectronics. 42:155-159
A new test object for calibrating the transmission electron microscope and scanning transmission microscope is suggested. The test was fabricated by means of cutting the silicon relief structure with the attested sizes of relief elements, which allow
Publikováno v:
Measurement Techniques. 51:998-1003
A test object for a scanning electron microscope, which has a trapezoidal profile of the relief with large angles of inclination of the side walls, is developed. The test object contains elements (protrusions) with three certified dimensions of the l
Publikováno v:
Measurement Techniques. 51:839-843
Data are given on the test object for scanning electron microscopy in which the components (ridges) are of trapezoidal profile and have large angles of inclination for the side walls. The width of the top surface of a projection is less than 10 nm. M
Publikováno v:
Measurement Science and Technology. 18:367-374
At the IX Session of the Commission of Length in September 1997, the values of the frequency and wavelength of He?Ne laser emission, stabilized by a saturated absorption line in molecular iodine, ? = 473?612?214?705 kHz, ? = 632.991?398?22 nm, were r
Publikováno v:
Russian Microelectronics. 33:342-349
A method of SEM linear measurement is proposed in which the reference marker displayed on the screen is used as a standard. The method works in a wide range of magnification without magnification calibration. Calibration of the marker against the MSh
Autor:
A. V. Rakov, Yu. V. Ozerin, A. M. Prokhorov, Yu. A. Novikov, Yu. I. Plotnikov, E. S. Gornev, Ch. P. Volk
Publikováno v:
Russian Microelectronics. 31:207-223
Linear standards for the calibration of SEMs and AFMs are reviewed. Requirements to a surface pattern designed to serve as a universal standard for the above purpose are defined. A trapezoidal pitch structure is proposed, in which the sidewalls of ba
Publikováno v:
Measurement Techniques. 44:365-369
The accuracy of measurement of microrelief dimensions in a scanning electron microscope on a cleavage surface of a specimen is estimated. That accuracy can be about 10% for good cleavage surfaces, being slightly higher for the dimensions of the tops
Autor:
A. V. Rakov, Yu. V. Ozerin, V. B. Mityukhlyaev, Mikhail V. Kovalchuk, V. P. Gavrilenko, Vladimir V. Roddatis, P. A. Todua, M. N. Filippov, Alexander L. Vasiliev
Publikováno v:
Measurement Science and Technology
We propose a new type of reference material as a magnification standard of a transmission electron microscope (TEM) and a scanning transmission electron microscope. The reference material represents a thin cross-section of a silicon relief structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4465ff1c785bf478f8cc447772a720e
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693933
https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693933
Publikováno v:
SPIE Proceedings.
The results of the study of a test object on scanning electron microscopes and atomic force microscopes are presented. The test object presents a relief on a monosilicon surface, and it is fabricated by the anisotropic etching of monosilicon. The rel
Publikováno v:
Russian Microelectronics; Nov2004, Vol. 33 Issue 6, p342-349, 8p