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Publikováno v:
Chinese Physics B. 19:018101-4
Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b373cfaad5edd61d8490c782b2d980ab
https://doi.org/10.1088/1674-1056/19/1/018101
https://doi.org/10.1088/1674-1056/19/1/018101
Publikováno v:
Chinese Physics B. 18:2603-2609
Strain effects on the polarized optical properties of c-plane and m-plane InxGa1−xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by analyzing the relative oscillator strength (ROS) and energy level splitting of the three t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf701b8e63990c6f184e1e0d37fd80cc
https://doi.org/10.1088/1674-1056/18/6/080
https://doi.org/10.1088/1674-1056/18/6/080
Autor:
Yang Zhi-Jian, Qin Zhi-Xin, YU Tong-Jun, Zhang Guo-Yi, MU Sen, Huang Liu-Bing, Chen Zhi-Zhong, Pan Yao-Bo, Jia Chuan-Yu
Publikováno v:
Chinese Physics Letters. 24:3245-3248
Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ea08d4f1ad00e87d7abb900415e1fe
https://doi.org/10.1088/0256-307x/24/11/061
https://doi.org/10.1088/0256-307x/24/11/061
Autor:
Yang Zhi-Jian, Feng Yu-Chun, Yu Tong-Jun, Niu Hanben, Li Zhong-Hui, Guo Bao-ping, Zhang Guo-Yi
Publikováno v:
Chinese Physics. 14:830-833
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900 degrees C, both the red-shift and the blue-shift of the photoluminescence (PL) p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42adfa9da3499f2628b7a44ca9171cd9
https://doi.org/10.1088/1009-1963/14/4/034
https://doi.org/10.1088/1009-1963/14/4/034
Autor:
Zhang Guo-Yi, Li Zilan, Yang Hua, Yang Zhi-Jian, Qin Zhi-Xin, Yu Tong-Jun, Nie Rui-Juan, Ren Qian, Hu Xiaodong, Lu Min, Zhang Bei, Chen Zhizhong, Chen Wei-Hua
Publikováno v:
physica status solidi (c). 1:2425-2428
Cleaved laser facets on free-standing InGaN laser diode membrane created by laser lift-off were fabricated and studied. Cleaved laser facets on GaN on sapphire have been compared with those on free-standing laser membrane. Atomic force microscopy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416b232b3208c008f5e6984e17352394
https://doi.org/10.1002/pssc.200405085
https://doi.org/10.1002/pssc.200405085
Publikováno v:
Chinese Physics. 11:624-628
Using the Langevin Monte Carlo method, the influence of friction on the directed motion of a Brownian particle driven by an external noise source is investigated. The results show that the existence and change of the environment friction influence th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e423b427cb1383d543c3694718cdefc
https://doi.org/10.1088/1009-1963/11/6/320
https://doi.org/10.1088/1009-1963/11/6/320
Autor:
Chen Zhi-Zhong, YU Tong-Jun, Qin Zhi-Xin, Yang Zhi-Jian, Kang Xiang-Ning, Zhang Guo-Yi, Pan Yao-Bo
Publikováno v:
Chinese Physics Letters. 24:1365-1367
InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33a8bf5806538a583eb5ea7b83d4f0a
https://doi.org/10.1088/0256-307x/24/5/066
https://doi.org/10.1088/0256-307x/24/5/066
Autor:
Yang Zhi-Jian, Zhang Guo-Yi, YU Tong-Jun, Hu Xiaodong, Lu Yu, Pan Yao-Bo, Lu Min, HU Cheng-Yu
Publikováno v:
Chinese Physics Letters. 21:2016-2018
The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72637080fac68fb44c0f6d81af242ef3
https://doi.org/10.1088/0256-307x/21/10/042
https://doi.org/10.1088/0256-307x/21/10/042
Autor:
Yang Zhi-Jian, LI Zhong-Hui, Zhang Guo-Yi, Niu Hanben, Tong Yuzhen, YU Tong-Jun, Guo Bao-ping, Feng Yu-Chun
Publikováno v:
Chinese Physics Letters. 21:1845-1847
An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300a5f8fc64d0f8225347bed30996c7b
https://doi.org/10.1088/0256-307x/21/9/048
https://doi.org/10.1088/0256-307x/21/9/048