Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yu Sup Jung"'
Publikováno v:
Molecular Crystals and Liquid Crystals. 677:10-18
In this study, p-type CuO and Cu2O-based heterojunction solar cells were deposited via RF magnetron sputtering, and their properties were studied as a function of the working pressure present durin...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca87c35c1942fbd805f4d57aca929e4
https://doi.org/10.1080/15421406.2019.1596244
https://doi.org/10.1080/15421406.2019.1596244
Effects of post-annealing treatment on the properties of reactive sputtered cuprous-oxide thin films
Autor:
Kyung Hwan Kim, Yu Sup Jung
Publikováno v:
Journal of the Korean Physical Society. 67:1013-1017
The p-type cuprous-oxide (Cu2O) thin films were fabricated by using the reactive sputtering method. As-deposited p-type Cu2O thin films were post-annealed in argon gas ambient. The as-deposited p-type Cu2O thin films exhibited Cu2O (111), Cu2O (220),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8686d23de74d21a39641875fe4d0735
https://doi.org/10.3938/jkps.67.1013
https://doi.org/10.3938/jkps.67.1013
Publikováno v:
Molecular Crystals and Liquid Crystals. 602:17-25
The indium tin oxide (ITO) thin films have advantages such as low resistivity (≒ 10−4Ω·cm) and high transmittance (>85%) in visible range. However, Indium in ITO is rare metal, a high cost and toxicity. Therefore, ITO substitute material is nec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::939abc4f70688c91fe26373e7d9a4a8e
https://doi.org/10.1080/15421406.2014.944363
https://doi.org/10.1080/15421406.2014.944363
Publikováno v:
Molecular Crystals and Liquid Crystals. 600:56-62
Gallium-aluminum doped zinc oxide (GAZO) thin film is evaluated as an alternative to ITO for use as transparent electrodes for display devices. GAZO transparent conducting thin films were deposited using a facing targets sputtering (FTS) system with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c50f1ca002db99f9814efcb65bb1854
https://doi.org/10.1080/15421406.2014.936772
https://doi.org/10.1080/15421406.2014.936772
Publikováno v:
Thin Solid Films. 549:70-73
GAZO/Ag/GAZO/Ag/GAZO transparent conductive multilayer films were deposited by facing-target sputtering (FTS) methods at room temperature. As-deposited multilayer thin films consisted of Ag metal thin film layers and transparent conductive GAZO thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a41063a1550fa531f17130d92332a06
https://doi.org/10.1016/j.tsf.2013.08.098
https://doi.org/10.1016/j.tsf.2013.08.098
Publikováno v:
Molecular Crystals and Liquid Crystals. 566:80-86
Gallium-Aluminum doped Zinc Oxide (Ga-Al doped ZnO) thin films prepared on glass substrates by using facing targets sputtering methods. Electrical, structural and optical properties of Ga-Al doped ZnO thin film with various thicknesses were studied i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a37a65abd85ca30e2a6f9cd7ce9c77c
https://doi.org/10.1080/15421406.2012.701832
https://doi.org/10.1080/15421406.2012.701832
Publikováno v:
Molecular Crystals and Liquid Crystals. 564:121-129
Highly conducting Al doped ZnO(AZO)/Cu/AZO triple multilayer thin films were deposited on polyethersulfonesusbtrate at room temperature. We investigated the structural, electrical, optical, and mechanical properties of triple multilayers as a functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f81c42f72f1e26b700c987f872d5b01
https://doi.org/10.1080/15421406.2012.691702
https://doi.org/10.1080/15421406.2012.691702
Publikováno v:
Microelectronic Engineering. 89:124-128
GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5f58d39f540c4424108d866d1a6e0d
https://doi.org/10.1016/j.mee.2011.02.071
https://doi.org/10.1016/j.mee.2011.02.071
Publikováno v:
Ceramics International. 38:S601-S604
Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f4b393bdb1812aba3c5f482ea8a2dcb
https://doi.org/10.1016/j.ceramint.2011.05.106
https://doi.org/10.1016/j.ceramint.2011.05.106
Publikováno v:
Molecular Crystals and Liquid Crystals. 550:212-218
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films on glass were prepared using facing target sputtering (FTS) methods by different oxygen flow rates at room temperature. The a-IGZO films were used as a channel layer for thin film transistors (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d586c7fbcdeaa6475b385ab4a375da33
https://doi.org/10.1080/15421406.2011.599748
https://doi.org/10.1080/15421406.2011.599748