Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Yu Jeong Seo"'
Autor:
Evgeny Berdyshev, Jihyun Kim, Byung Eui Kim, Elena Goleva, Taras Lyubchenko, Irina Bronova, Anna Sofia Bronoff, Olivia Xiao, Jiwon Kim, Sukyung Kim, Mijeong Kwon, Sungjoo Lee, Yu Jeong Seo, Kyunga Kim, Suk-Joo Choi, Soo-Young Oh, Seung Hwan Kim, So Yeon Yu, Seung Yong Hwang, Kangmo Ahn, Donald Y.M. Leung
Publikováno v:
Journal of Allergy and Clinical Immunology. 151:1307-1316
Publikováno v:
Epilia: Epilepsy and Community. 4:24-31
Autor:
Evgeny Berdyshev, Jihyun Kim, Byung Eui Kim, Elena Goleva, Taras Lyubchenko, Irina Bronova, Anna Sofia Bronoff, Olivia Xiao, Jiwon Kim, Sukyung Kim, Mijeong Kwon, Sungjoo Lee, Yu Jeong Seo, Kyunga Kim, Suk-Joo Choi, Soo-Young Oh, Seung Hwan Kim, So Yeon Yu, Seung Yong Hwang, Kangmo Ahn, Donald YM YM Leung
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
International Journal of Engineering and Technology Innovation, Vol 10, Iss 1 (2020)
Previous studies on Artificial Neural Network (ANN)-based automatic berthing showed considerable increases in performance by training ANNs with a set of berthing datasets. However, the berthing performance deteriorated when an extrapolated initial po
Autor:
Yu Jeong Seo, Na-Yeon Gil, Won Seok Seo, Yonghoon Hong, Gaehang Lee, Bongjin Moon, Daehee Yang, Hyuk-Jin Cha, Sung Woo Lee, Da Jeong Kim
Publikováno v:
ChemNanoMat. 4:132-139
Covalently functionalized water-soluble FeCo/graphitic shell nanocrystals (f-FeCo/GC NCs) were synthesized via 1,3-dipolar cycloaddition of azomethine ylides generated in situ from sarcosine and glucose. The FeCo core has superparamagnetic properties
Publikováno v:
IEEE Transactions on Electron Devices. 57:2398-2404
This paper presents a new class of charge-trap Flash memory device with resistive switching mechanisms. We propose a fused memory scheme using a structure of metal/Pr0.7Ca0.3MnO3 (PCMO)/nitride/oxide/silicon to graft fast-switching features of resist
Publikováno v:
Journal of the Korean Physical Society. 55:367-371
We investigate the simulated and measured program characteristics for 4-bit program operations in silicon-oxide-nitride-oxide-silicon (SONOS) devices by using two-dimensional (2-D) device simulations. For this calculation, the width of the region wit
Autor:
Jung Hyuk Koh, Yun Mo Sung, Hee-Dong Kim, Yu Jeong Seo, Ho Myoung An, Won-Ju Cho, Tae Geun Kim, Kyoung Chan Kim, Jong Guk Kim
Publikováno v:
Thin Solid Films. 517:5589-5592
We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO 2 and Al 2 O 3 , under the influence of the same electric field. The thickness of the Al 2 O 3 layer is set to 150 A,
Publikováno v:
Journal of the Korean Physical Society. 53:3302-3306
Autor:
Sang Mo Koo, Jung Hyuk Koh, Hee-Dong Kim, Ho Myoung An, Yun Mo Sung, Yu Jeong Seo, Tae Geun Kim, Kyoung Chan Kim
Publikováno v:
Journal of nanoscience and nanotechnology. 10(7)
We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical an