Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Yu Heng Jan"'
Publikováno v:
IET Nanodielectrics, Vol 4, Iss 1, Pp 21-26 (2021)
Abstract Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest
Externí odkaz:
https://doaj.org/article/77e721bf893e4fd7be89421ca81ec36c
Autor:
Jack Jia-Sheng Huang, Yu-Heng Jan
Publikováno v:
Journal of Systemics, Cybernetics and Informatics, Vol 16, Iss 2, Pp 43-48 (2018)
Complexity science is gaining popularity due to its unique approach to address convoluted and multi-dimentional problems. In this work, we present a general case study of complexity science by means of analytical and logical interconnection between s
Externí odkaz:
https://doaj.org/article/c19a6f62074d473496c4b4a602b812a2
Autor:
Naseem, Zohauddin Ahmad, Yan-Min Liao, Rui-Lin Chao, Po-Shun Wang, Yi-Shan Lee, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, Hung-Shiang Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 4, p 98 (2021)
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://doaj.org/article/ba4f992a877141209d623481cb3d3b35
Autor:
Zohauddin Ahmad, Jack Jia-Sheng Huang, Jin-Wei Shi, Sheng-Yun Wang, Yu-Heng Jan, Naseem, H. S. Chen, Hsiang-Szu Chang, Yan-Min Liao, Po-Shun Wang, Emin Chou, Sean Yang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
In this work, a novel In0.52Al0.48As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with a special p-side up etched mesa structure to zero the electric (E)-field at the periphery of th
Autor:
Hung Shiang Chen, Emin Chou, Sheng Yun Wang, Yi Shan Lee, Naseem, Jack Jia Sheng Huang, Yu Heng Jan, Zohauddin Ahmad, Sean Yang, Po Shun Wang, Yan Min Liao, Hsiang Szu Chang, Rui Lin Chao, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 98, p 98 (2021)
Photonics
Volume 8
Issue 4
Photonics
Volume 8
Issue 4
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Autor:
Ansel Chen, David Klotzkin, C.K. Wang, Deo Yu, Yu-Heng Jan, NiYeh Wu, S.C. Huang, H. S. Chen, Jack Jia-Sheng Huang, ChunKo Chen, Emin Chou
Publikováno v:
Conference on Lasers and Electro-Optics.
In this paper, we present highly reliable 6-channel CWDM of 25G DFB lasers that exhibit low threshold current, high bandwidth, and excellent eye pattern for uncooled operations of -40 to 85°C. Robust reliability is demonstrated to guarantee stable o
Autor:
Nassem Nassem, Sheng-Yun Wang, Jack Jia-Sheng Huang, Emin Chou, Hsiang-Szu Chang, Yu-Heng Jan, Jin-Wei Shi, Sean Yang, H. S. Chen
Publikováno v:
OFC
High-speed/power APDs with novel etched-mesa structure are demonstrated to suppress edge breakdown. With 24μm diameters, they achieve 21GHz bandwidths, 5.5A/W responsivity, and RF saturation power over +5 dBm (10 GHz) under 8mA photocurrent and 0.9V
Publikováno v:
2020 Opto-Electronics and Communications Conference (OECC).
EMLs for ultra-high data-rate modulation is subject to the residual facet reflection (RFR). We verify by simulation and experiments the enhanced immunity to RFR for uncooled EMLs by incorporating partial-corrugated-grating (PCG) in the laser section.
Autor:
Jin-Wei Shi, Hsiang-Szu Chang, Nassem, Emin Chou, Jack Jia-Sheng Huang, Rui-Lin Chao, C. J. Ni, H. S. Chen, Yu-Heng Jan
Publikováno v:
OFC
UTC-PD with type-II GaAs0.5Sb0.5/In0.53Ga0.47As hybrid absorber integrated with substrate lens is demonstrated with high responsivity (0.95A/W) and wide O-E bandwidth (33GHz) at 1310 nm wavelength. High-sensitivity (-10dBm OMA) is realized in 400G le
Autor:
H. S. Chen, Hsiang-Szu Chang, Song-Lin Wu, C. J. Ni, Yu-Heng Jan, Naseem, Emin Chou, N.-W. Wang, Rui-Lin Chao, Jhih-Min Wun, Jin-Wei Shi, Jack Jia-Sheng Huang
Publikováno v:
Journal of Lightwave Technology. 36:5505-5510
High-speed top-illuminated avalanche photodiodes (APDs) with large diameters (25 μ m) are demonstrated for the application of 4-channels 100 Gb/s data rate. They achieve a bandwidth of 17 GHz at low-gain (MG = 6.2; 3.6 A/W) and large-gain bandwidth