Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Yu Chen Lai"'
Autor:
Aiche Sabah, Musheer A. Aljaberi, Salima Hamouda, Djamila Benamour, Keltoum Gadja, Yu-Chen Lai, Chuan-Yin Fang, Amira Mohammed Ali, Chung-Ying Lin
Publikováno v:
PeerJ, Vol 12, p e17982 (2024)
Narcissists are characterized by confidence, fragility, a desire for social approval without showing interest in others, charm, self-assurance, arrogance, and aggression. This study assesses the psychometric properties of the Arabic version of the Na
Externí odkaz:
https://doaj.org/article/1fcf2b2ecc07422783426a06d729ed62
Publikováno v:
Children, Vol 10, Iss 11, p 1742 (2023)
The coronavirus pandemic has become an unprecedented world crisis in which we have struggled against the most potent threat of the twenty-first century. This pandemic has had a profound impact on individuals and families. Therefore, the study aimed t
Externí odkaz:
https://doaj.org/article/7306eac074a142a3b16b2f16f4f87fdb
Autor:
Hai-Bin Cui, Jin-Hua Li, Xiao Zhang, Min Zhou, Zhi-Zhuan Huang, Yu-Chen Lai, Jing-Xia Qiu, Ya-Jie Ren, Hua-Xin Zhang
Publikováno v:
International Journal of Hydrogen Energy. 48:10891-10902
Publikováno v:
Macromolecules. 56:241-253
Publikováno v:
ICT Express, Vol 4, Iss 3, Pp 119-123 (2018)
In this work, we study how to minimize the average system delay in a cloud computing center with heterogeneous servers, where each server may have a different average service rate. We consider M ∕ M i ∕ C ∕ K with a single server threshold and
Externí odkaz:
https://doaj.org/article/5816377688814484a2fddec306a7caa0
Publikováno v:
2022 IEEE International Conference on Big Data (Big Data).
Publikováno v:
Journal of Electronic Materials. 50:5453-5461
This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current bl
Publikováno v:
Journal of Electronic Materials. 50:1162-1166
This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state
Publikováno v:
IEEE Letters on Electromagnetic Compatibility Practice and Applications. 2:142-146
The pulse generator based on drift step recovery diode(DSRD) has broad development prospects in the research of high pulse repetition frequency(PRF), high power pulse generators. In this letter, a pulse generator based on DSRD is successfully develop
Publikováno v:
2022 24th International Conference on Advanced Communication Technology (ICACT).