Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Yu A Aleshchenko"'
Autor:
N. E. Sluchanko, E. S. Zhukova, L. N. Alyabyeva, B. P. Gorshunov, A. V. Muratov, Yu. A. Aleshchenko, A. N. Azarevich, M. A. Anisimov, N. Yu. Shitsevalova, S. E. Polovets, V. B. Filipov
Publikováno v:
Journal of Experimental and Theoretical Physics. 136:148-154
Autor:
V. A. Yakovlev, S. Schreyeck, V. S. Vinogradov, I. V. Kucherenko, G. Karczewski, A. V. Muratov, Yu. A. Aleshchenko, N. N. Novikova, S. Chusnutdinow
Publikováno v:
Bulletin of the Lebedev Physics Institute. 47:16-22
Reflectance spectra of thin Pb1 –xSnxTe films (~60 nm) with x = 0.25, 0.53, and 0.59, grown by MBE on hybrid GaAs/CdTe substrates, are measured in the frequency range of 20–5500 cm–1 and the temperature range of 5–300 K. The temperature depen
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 33(4)
Optical spectroscopy was used to study the electrodynamics and hidden transport properties of a BaFe
Autor:
V. P. Martovitsky, A. V. Muratov, A. V. Klekovkin, A. B. Mehiya, Yu. A. Aleshchenko, V. S. Krivobok
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 82:418-423
Elastically strained metastable Ge1–xSn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR tr
Autor:
Boris Gorshunov, N. Yu. Shitsevalova, Elena S. Zhukova, Yu. A. Aleshchenko, S. V. Demishev, V. B. Filipov, N. E. Sluchanko, Victor I. Torgashev, A. V. Muratov, Gennady A. Komandin
Publikováno v:
JETP Letters. 107:100-105
By measuring room temperature infrared (40–35000 cm–1) reflectivity of metallic LuB12 single crystals with different isotopic compositions (natB, 10B, 11B), we find that to model the spectrum we had to introduce, additionally to Drude free-carrie
Autor:
O. N. Koroleva, Alexander Vladimirovich Mazhukin, Yu. A. Aleshchenko, Vladimir Ivanovich Mazhukin
Publikováno v:
Bulletin of the Lebedev Physics Institute. 44:198-201
Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi–Dirac quantum statistics to describe carriers, since the silicon chemical potential appears i
Autor:
Boris Gorshunov, N. E. Sluchanko, S. E. Polovets, V. B. Filipov, G. A. Komandin, Yu. A. Aleshchenko, N. Yu. Shitsevalova, L. N. Alyabyeva, V. Voronov, Elena S. Zhukova, Mikhail A. Anisimov, A. V. Muratov
Publikováno v:
Physical Review B. 100
Using Fourier-transform infrared spectroscopy and optical ellipsometry, room temperature spectra of complex conductivity of single crystals of hexaborides ${\mathrm{Gd}}_{x}{\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{B}}_{6},x(\text{Gd})=\text{0},0.01,0
Autor:
N E, Sluchanko, A N, Azarevich, A V, Bogach, N B, Bolotina, V V, Glushkov, S V, Demishev, A P, Dudka, O N, Khrykina, V B, Filipov, N Yu, Shitsevalova, G A, Komandin, A V, Muratov, Yu A, Aleshchenko, E S, Zhukova, B P, Gorshunov
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 31(6)
Accurate low temperature charge transport measurements in combination with high-precision x-ray diffraction experiments have allowed detection of the symmetry lowering in the single domain Tm
Autor:
Boris Gorshunov, Elena S. Zhukova, Volodymyr Filipov, Gennady A. Komandin, A. Azarevich, S. V. Demishev, V. V. Glushkov, Alexander P. Dudka, Nadezhda B. Bolotina, N. Yu. Shitsevalova, O. N. Khrykina, N. E. Sluchanko, A. V. Bogach, A. V. Muratov, Yu. A. Aleshchenko
Higher accuracy low temperature charge transport measurements in combination with precise X-ray diffraction experiment have allowed detecting the symmetry lowering in the single domain Tm0.19Yb0.81B12 crystals of the family of dodecaborides with meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7822e6c6c561ab8e49e91515a207dae7
Autor:
T. N. Zavaritskaya, N. N. Mel’nik, I. V. Kucherenko, V. A. Yakovlev, N. N. Novikova, G. Karczewski, Yu. A. Aleshchenko, A. V. Muratov
Publikováno v:
Semiconductors. 49:644-648
The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm−1 at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe an