Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yu (Anne) Zeng"'
Publikováno v:
Solid-State Electronics. 49:1017-1028
In this work, we present the characterization of electron transport in 4H and 6H–SiC inversion layers with the development of a physics-based, 2-D quantum-mechanical model to explain the I DS – V GS , g m – V GS device electrical characteristic
Publikováno v:
Solid-State Electronics. 46:1579-1582
In this paper the interface trap densities (Dit) of 4H and 6H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We sho
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
In this paper, we study about the interface charges on the operation of 4H silicon carbide static induction transistors. The structure of SIT provides high breakdown voltage and high current density between the source and drain terminals. Influence o
Autor:
Yu Anne Zeng, Marvin H. White
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFE
Publikováno v:
International Semiconductor Device Research Symposium, 2003; 2003, p134-135, 2p