Zobrazeno 1 - 10
of 737
pro vyhledávání: '"Yu, Z. G."'
Autor:
Sgrignuoli, F., Viti, I., Yu, Z. G., Albright, E., Lenahan, P., Goswami, S., Ghandi, R., Aghayan, M., Shaddock, D. M.
Silicon Carbide (SiC) is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance (ODMR) in SiC has been widely studied for ma
Externí odkaz:
http://arxiv.org/abs/2411.15196
Publikováno v:
Journal of Mining and Metallurgy. Section B: Metallurgy, Vol 56, Iss 1, Pp 35-42 (2020)
Refining slags is widely used in the production of high-value-added alloys and special steels. The removal of impurities depends on the mass transfer between the slag-metal interface, and the carbide capacity of the refining slags is crucial to contr
Externí odkaz:
https://doaj.org/article/e08f6261838d42f7923f2d18010a3ca8
Autor:
Sorkin, V.1 (AUTHOR) sorkinv@ihpc.a-star.edu.sg, Yu, Z. G.1 (AUTHOR), Chen, S.1 (AUTHOR), Tan, Teck L.1 (AUTHOR), Aitken, Z. H.1 (AUTHOR), Zhang, Y. W.1 (AUTHOR) zhangyw@ihpc.a-star.edu.sg
Publikováno v:
Scientific Reports. 7/13/2022, Vol. 12 Issue 1, p1-12. 12p.
Publikováno v:
Phys. Rev. B 70 (2004) 224514.
By applying an unrestricted Hartree-Fock and a Random Phase approximations to a multiband Peierls-Hubbard Hamiltonian, we study the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhomogeneities indu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0403525
Autor:
Ruester, C., Borzenko, T., Gould, C., Schmidt, G., Molenkamp, L. W., Liu, X., Wojtowicz, T. J., Furdyna, J. K., Yu, Z. G., Flatte, M. E.
Publikováno v:
Phys. rev. Lett. 91, 216602, (2003)
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308385
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons are spin po
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308220
By applying an unrestriced Hartree-Fock approximation and a Random Phase approximation to multiband Peierls-Hubbard Hamiltonians, we determine the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhom
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306672
Publikováno v:
Phys. Rev. E, vol. 66, (2002) 031910.
This paper considers the problem of matching fragment to organism using its complete genome. Our method is based on the probability measure representation of a genome. We first demonstrate that these probability measures can be modelled as recurrent
Externí odkaz:
http://arxiv.org/abs/physics/0207060
Autor:
Yu, Z. G., Flatte, M. E.
Publikováno v:
Phys. Rev. B 66, 235302 (2002).
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductor
Externí odkaz:
http://arxiv.org/abs/cond-mat/0206321
Autor:
Yu, Z. G., Flatte, M. E.
Publikováno v:
Phys. Rev. B 66, 201202(R) (2002).
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0201425