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The Research and Design of a Low Temperature Drift Bandgap Reference

Autor: Li Chengpeng, Yu Youling

Publikováno v: Procedia Engineering. 29:1779-1783

This article talks about using chrt 0.35 N well technology to design a bandgap reference with low temperature drift, the circuit uses two resistances with different temperature characteristic series in the PTAT current in order to provide curve compe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e7c2281e57328fcf72f15fc4b4b9a2c
https://doi.org/10.1016/j.proeng.2012.01.212

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Architecture Research and Design Implementation of Multi-data and Multi-path Communication Control System

Autor: Yu Youling, He Ya-xi, Li Xiu-xiu

Publikováno v: CyberC

The paper focuses on the architecture research and design implementation of multi-data and multi-path communication control system based on the Flex 4.0 development platform. It develops a new communication protocol and completes the software impleme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b8465519e35110970485b4e15429ef4
https://doi.org/10.1109/cyberc.2013.40

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Finger Tracking and Gesture Recognition with Kinect

Autor: Yu Youling, Tao Hongyong

Publikováno v: CIT

This paper presents a novel and real-time system for human-computer interaction with hand gestures at a distance. The system follows the principle of multi-touch techniques but is touch-free and only needs an ordinary computer screen, while common im

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ac0cddf1f4ff417dd5603cef380e3a0
https://doi.org/10.1109/cit.2012.62

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Low-FOM planar MOSFET

Autor: Yu Youling, Cen Feng, Kan Hongjin, Wang Cui-xia

Publikováno v: 2010 The 2nd International Conference on Industrial Mechatronics and Automation.

Low FOM (Figure-of-merit) planar MOSFET is presented in this paper. The p-base of the developed MOSFET is formed by self-aligned ion implanted. Only four masks is used to fabrication while the performance of the developed MOSFET is better than the pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4f26957fc5aacb3283aa1853bae431b
https://doi.org/10.1109/icindma.2010.5538272

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