Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Ys Oei"'
Publikováno v:
Semiconductor Science and Technology. 13:A169-A172
The lateral coupling of waveguiding structures in both [011] and [011] directions is studied using embedded selective area epitaxy by chemical beam epitaxy. All growth steps are carried out under the same growth conditions on (100) InP substrates mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96b7effc22ef93175c7d1f7e2fbb196b
https://doi.org/10.1088/0268-1242/13/8a/048
https://doi.org/10.1088/0268-1242/13/8a/048
Publikováno v:
Journal of Crystal Growth, 188(1-4), 288-294. Elsevier
The lateral coupling of waveguiding structures in both [0 1 1] and [0 1 1] directions is studied using embedded selective area epitaxy by chemical beam epitaxy. All growth steps are carried out under the same growth conditions on (1 0 0) InP substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2849eeccd9ee4498ef657d219de17510
https://doi.org/10.1016/s0022-0248(98)00068-2
https://doi.org/10.1016/s0022-0248(98)00068-2
Autor:
G. Servanton, MK Meint Smit, TJ Tom Eijkemans, S Sanguan Anantathanasarn, E.J. Geluk, F. W. M. van Otten, Erwin Bente, T. de Vries, Yohan Barbarin, E. Smalbrugge, P.J. van Veldhoven, Ys Oei, JH Joachim Wolter, R Richard Nötzel
Publikováno v:
Applied Physics Letters, 89(7):073115, 073115-1/3. American Institute of Physics
The authors report lasing of InAs/InGaAsP/InP (100) quantum dots (QDs) wavelength tuned into the 1.55 µm telecom region. Wavelength control of the InAs QDs in an InGaAsP/InP waveguide is based on the suppression of As/P exchange through ultrathin Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b4ca7544a484a3824e06bf1aa2aaf54
https://research.tue.nl/en/publications/89614ae4-b98a-42d2-b9b9-d13ced6ec830
https://research.tue.nl/en/publications/89614ae4-b98a-42d2-b9b9-d13ced6ec830
Autor:
J.J.G.M. van der Tol, R.T.H. Rongen, JH Joachim Wolter, B.H.P. Dorren, M.R. Leys, BH Verbeek, Ys Oei, H Vonk, Cgm Vreeburg
Publikováno v:
Journal of Crystal Growth. 164:442-448
We investigated the influence of strain on the optical birefringence in waveguides consisting of Ga x In 1-x As/InP multiquantum well layers. The range of growth parameters to achieve good quality material for the waveguide structures were determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238b3b2216b6d6a023e146a7fd3e0ca5
https://doi.org/10.1016/0022-0248(96)00012-7
https://doi.org/10.1016/0022-0248(96)00012-7
Autor:
Ys Oei, LM Luc Augustin, Martijn J. R. Heck, Fausto Gomez-Agis, R Richard Nötzel, D.J. Robbins, Xaveer Leijtens, Aaron Albores-Mejia, T. de Vries, MK Meint Smit, H.J.S. Dorren, S. Zhang, Kevin A. Williams
Publikováno v:
Hot Interconnects
Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009, 157-162
STARTPAGE=157;ENDPAGE=162;TITLE=Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009
Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009, 157-162
STARTPAGE=157;ENDPAGE=162;TITLE=Proceedings of the 17th Annual IEEE Symposium on High-Performance Interconnects, 25-27 August 2009
We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f46d20217614d8a1d078f3120324e91
https://doi.org/10.1109/hoti.2009.10
https://doi.org/10.1109/hoti.2009.10
Autor:
T. de Vries, Aaron Albores-Mejia, Ys Oei, MK Meint Smit, R Richard Nötzel, E. Smalbrugge, Kevin A. Williams
Publikováno v:
Proceedings of the 14th OptoElectronics and Communications Conference, OECC 2009, 13-17 July 2009, Hong Kong, TuJ2-1/2
STARTPAGE=TuJ2;ENDPAGE=1/2;TITLE=Proceedings of the 14th OptoElectronics and Communications Conference, OECC 2009, 13-17 July 2009, Hong Kong
STARTPAGE=TuJ2;ENDPAGE=1/2;TITLE=Proceedings of the 14th OptoElectronics and Communications Conference, OECC 2009, 13-17 July 2009, Hong Kong
Scalable quantum dot based optical switches offer energy-efficient low-latency data routing. Low power penalty routing over multiple stages are feasible with with the prospect of larger scale photonic integration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9caa2ffc7b58f5e5bb5512a17d936c2
https://doi.org/10.1109/oecc.2009.5217938
https://doi.org/10.1109/oecc.2009.5217938
Publikováno v:
IEEE Photonics Technology Letters. 11:1599-1601
A four wavelength 2/spl times/2 optical wavelength-division-multiplexed cross-connect with dilated switches is reported. The device is monolithically integrated on InP and consist of two eight-channel PHASAR's combined with 16 electrooptic Mach-Zehnd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c3d53e8f6d9d606a775ac04f085c37
https://doi.org/10.1109/68.806859
https://doi.org/10.1109/68.806859
Autor:
M. van Heijningen, T. de Vries, MK Meint Smit, R Richard Nötzel, Xaveer Leijtens, Patryk Urban, G. van der Bent, Lai Xu, Ys Oei, H. de Waardt, E. Smalbrugge
Publikováno v:
The 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, 9-13 November 2008, Newport Beach, CA, USA
Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA, 121-122
STARTPAGE=121;ENDPAGE=122;TITLE=Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA
Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA, 121-122
STARTPAGE=121;ENDPAGE=122;TITLE=Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA
In this paper, we present a low cost and polarization independent photoreceiver which is part of the optical network unit (ONU) for the fiber access network. It consists of one InP-photodetector and a low cost SiGe amplifier. It operates error free w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93106ae4cc01f5f7fa3f802b74bad1c0
http://resolver.tudelft.nl/uuid:2e6c328d-0e54-4169-8035-246cfc348bc3
http://resolver.tudelft.nl/uuid:2e6c328d-0e54-4169-8035-246cfc348bc3
Autor:
J. Van Campenhout, T. de Vries, L. Di Cioccio, Oded Raz, MK Meint Smit, Regis Orobtchouk, P.J. van Veldhoven, C Lagahe, P.R.A. Binetti, J-M. Fedeli, Xaveer Leijtens, D. Van Thourhout, Ys Oei, R Richard Nötzel
Publikováno v:
Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA, 302-303
STARTPAGE=302;ENDPAGE=303;TITLE=Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA
LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings
STARTPAGE=302;ENDPAGE=303;TITLE=Proceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA
LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings
We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48d833bef67b4d39b8f268cead6da789
https://research.tue.nl/nl/publications/8335c7f2-0f0a-4e97-b4fb-c81cb6b40830
https://research.tue.nl/nl/publications/8335c7f2-0f0a-4e97-b4fb-c81cb6b40830
Autor:
T. de Vries, L. Di Cioccio, P.R.A. Binetti, R Richard Nötzel, J-M. Fedeli, D. Van Thourhout, Regis Orobtchouk, C Lagahe, Mahmoud Nikoufard, P.J. van Veldhoven, Ys Oei, MK Meint Smit, J. Van Campenhout, Xaveer Leijtens, Christian Seassal
Publikováno v:
Proceedings of the 2007 4th IEEE International Conference on Group IV Photonics, 19-21 September 2007, Tokyo, Japan, 34-36
STARTPAGE=34;ENDPAGE=36;TITLE=Proceedings of the 2007 4th IEEE International Conference on Group IV Photonics, 19-21 September 2007, Tokyo, Japan
2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
STARTPAGE=34;ENDPAGE=36;TITLE=Proceedings of the 2007 4th IEEE International Conference on Group IV Photonics, 19-21 September 2007, Tokyo, Japan
2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd38c2325c94ddf11904b015c37162e6
https://doi.org/10.1109/group4.2007.4347658
https://doi.org/10.1109/group4.2007.4347658