Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yowichi Fujita"'
Autor:
Tetsuichi Kishishita, Ryoji Kosugi, Yowichi Fujita, Yoshinori Fukao, Kazutoshi Kojima, Keiko Masumoto, Hajime Nishiguchi, Manobu M. Tanaka, Yasunori Tanaka
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Autor:
S. Mitsui, Miho Yamada, R. Nishimura, Mari Asano, Toshinobu Miyoshi, Kazuhiko Hara, Ryutaro Hamasaki, K. Tauchi, Yoichi Ikegami, Ikuo Kurachi, Shunsuke Honda, Naoshi Tobita, Toru Tsuboyama, Yowichi Fujita, Yasuo Arai
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 824:439-442
We are developing advanced pixel sensors using silicon-on-insulator (SOI) technology. A SOI wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy,
Autor:
Yasushi Igarashi, Takashi Kohriki, Tadashi Chiba, Toshinobu Miyoshi, M. Yanagihara, H. Tadokoro, Ayaki Takeda, Toru Tsuboyama, Kazuhiko Hara, Yoshinobu Unno, K. Tauchi, Yoshimasa Ono, Yowichi Fujita, Yoshio Arai, Morifumi Ohno, Shunsuke Honda, Naoyuki Shinoda, Y. Ikemoto, Yoichi Ikegami
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 732:530-534
Truly monolithic pixel detectors were fabricated with 0.2 μ m SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on