Zobrazeno 1 - 10
of 285
pro vyhledávání: '"Yow Jon Lin"'
Publikováno v:
Chinese Journal of Physics. 76:35-43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999f229df7022c011aa949d1aa9a1e90
https://doi.org/10.1016/j.cjph.2021.12.025
https://doi.org/10.1016/j.cjph.2021.12.025
Publikováno v:
Indian Journal of Physics. 95:865-870
This study determines the effect of incorporating polyvinyl alcohol (PVA) into ZrO2 (PVA:ZrO2) on the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si (p+-Si) devices. In order to determine the correlation between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38735f5801407dcba36e08e419d1174f
https://doi.org/10.1007/s12648-020-01764-w
https://doi.org/10.1007/s12648-020-01764-w
Publikováno v:
Chinese Journal of Physics. 61:248-254
The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c9c93b386db74c586b1717e49f1418
https://doi.org/10.1016/j.cjph.2019.08.013
https://doi.org/10.1016/j.cjph.2019.08.013
Publikováno v:
Chinese Journal of Physics. 61:22-28
The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a38d463a02fc6488a0b036d629b26078
https://doi.org/10.1016/j.cjph.2019.07.005
https://doi.org/10.1016/j.cjph.2019.07.005
Publikováno v:
Indian Journal of Physics. 94:1209-1214
This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d32bc0793c25d67cfada27ca5ab7ebcf
https://doi.org/10.1007/s12648-019-01568-7
https://doi.org/10.1007/s12648-019-01568-7
Publikováno v:
Indian Journal of Physics. 94:797-800
The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43579af2c617a645c42c8f9cb59bc367
https://doi.org/10.1007/s12648-019-01526-3
https://doi.org/10.1007/s12648-019-01526-3
Autor:
Yow-Jon Lin, Yu-Cheng Lin
Publikováno v:
AIP Advances, Vol 4, Iss 10, Pp 107105-107105-6 (2014)
The temperature-dependent hysteresis-type transfer characteristics of pentacene-based organic thin film transistors (OTFTs) were researched. The temperature-dependent transfer characteristics exhibit hopping conduction behavior. The fitting data for
Externí odkaz:
https://doaj.org/article/d16488a5858e48b5a6b42d8f744df621
Publikováno v:
Bulletin of Materials Science. 43
The optical and structural properties of ZnO nanorods that are modified using $$\hbox {H}_2\text {O}_2$$ and used as the conductive filament (CF) for poly(methyl methacrylate) (PMMA)-based resistive switching (Rs) applications are studied. ZnO nanoro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0048af7b686a5f2f5bbc44fe9a592d
https://doi.org/10.1007/s12034-020-2080-1
https://doi.org/10.1007/s12034-020-2080-1
Publikováno v:
Journal of Luminescence. 242:118599
This study determines the effect of the addition of graphene on the photoluminescent and electrical properties of ZnO films that are prepared using the sol-gel method. ZnO and graphene-doped ZnO thin films that are annealed at 500 °C for 30 min in n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4818cd611b807b34411c932be2c89da5
https://doi.org/10.1016/j.jlumin.2021.118599
https://doi.org/10.1016/j.jlumin.2021.118599