Effects of Thermal Annealing on the Structural and Electrical Properties of ZnO Thin Films for Boosting their Piezoelectric Response

Autor: Quang Chieu Bui, X. Mescot, Carmen Jiménez, Bassem Salem, Youssouf Guerfi, Vincent Consonni, Gustavo Ardila, Hervé Roussel

Publikováno v: Journal of Alloys and Compounds
Journal of Alloys and Compounds, 2021, 870, pp.159512. ⟨10.1016/j.jallcom.2021.159512⟩
Journal of Alloys and Compounds, Elsevier, 2021, 870, pp.159512. ⟨10.1016/j.jallcom.2021.159512⟩

International audience; The growth process and post-deposition treatment have strong effects on the structure of ZnO thin films, which can also significantly affect their electrical and piezoelectric properties. In this report, the effect of high tem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faacd664cb7a89c553756cb900513301
https://hal.science/hal-03193332/document

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Autor: Hervé Roussel, Carmen Jiménez, Youssouf Guerfi, Eirini Sarigiannidou, Franck Bassani, Fabrice Donatini, X. Mescot, Vincent Consonni, Bassem Salem, Quang Chieu Bui, Gustavo Ardila, Odette Chaix-Pluchery

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, ⟨10.1021/acsami.0c04112⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (26), pp.29583-29593. ⟨10.1021/acsami.0c04112⟩

ZnO thin films and nanostructures have received increasing interest in the field of piezoelectricity over the last decade, but their formation mechanisms on silicon when using pulsed-liquid injection metal–organic chemical vapor deposition (PLI-MOC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b441c970b7d5d66e1acc9a48e951f6e
https://hal.univ-grenoble-alpes.fr/hal-02917568

High resolution HSQ nanopillar arrays with low energy electron beam lithography

Autor: Youssouf Guerfi, Guilhem Larrieu, Franck Carcenac

Publikováno v: Microelectronic Engineering. 110:173-176

Electron beam lithography (EBL) is commonly used for the fabrication of nanostructures by top-down approach with precise control of size, shape, aspect ratio, and location. In this article, we demonstrate the realization of high aspect ratio nanopill

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b42b1e9e9c5b6e7ba06e02c822648777
https://doi.org/10.1016/j.mee.2013.03.055

Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array

Autor: Guilhem Larrieu, N. Clement, Youssouf Guerfi, Xiang-Lei Han

Publikováno v: ESSDERC

A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations both in processing (layer engineering at nanoscale), in electric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e22fd84f488b7e9b752c49ad61ad845
https://doi.org/10.1109/essderc.2015.7324750

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Autor: Youssouf Guerfi, Guilhem Larrieu

Publikováno v: Nanoscale Research Letters
Nanoscale Research Letters, 2016, 11, pp.210. ⟨10.1186/s11671-016-1396-7⟩
Nanoscale Research Letters, SpringerOpen, 2016, 11, pp.210. ⟨10.1186/s11671-016-1396-7⟩

International audience; Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In part

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aeb1e3dbf4e0e904ff0eda7abf8a2036