Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Youssef Travaly"'
The Readiness of Innovation Systems for the Fourth Industrial Revolution (4IR) in Sub-Saharan Africa
Publikováno v:
Entrepreneurship, Technology Commercialisation, and Innovation Policy in Africa ISBN: 9783030582395
This chapter discusses the level of readiness of innovation systems of sub-Saharan African economies for the 4IR. The readiness here refers to at least four dimensions or pre-requirements of the 4IR: the (digital) infrastructure, the education and sk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8898b1dbfee2437c0c63f58db698b6dc
https://doi.org/10.1007/978-3-030-58240-1_2
https://doi.org/10.1007/978-3-030-58240-1_2
Publikováno v:
Metallized Plastics 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef7347cc1861c0cdc74fe4b28113e37
https://doi.org/10.1201/9780429070471-15
https://doi.org/10.1201/9780429070471-15
Autor:
Yuichi Miyamori, Yann Civale, Dimitrios Velenis, Annemie Van Ammel, Vladimir Cherman, A. Cockburn, Youssef Travaly, Bart Swinnen, Zsolt Tkei, Virginie Gravey, Sarasvathi Thangaraju, Nirajan Kumar, Geert Van der Plas, Zhitao Cao, Augusto Redolfi, Eric Beyne, Kristof Croes
Publikováno v:
Microelectronic Engineering. 106:155-159
Barrier reliability in 3D through-Si via (TSV) Cu interconnections requires particular attention as these structures come very close to the active devices and Cu diffusion into the silicon substrate would significantly affect device performance. This
Autor:
A. Maestre Caro, Guido Maes, Zsolt Tokei, Youssef Travaly, Gustaaf Borghs, Silvia Armini, Gerald Beyer
Publikováno v:
Microelectronic Engineering. 106:76-80
In order to enable an oxide-free Cu-to-Cu bonding in a (dual) damascene process, 3-aminopropyltrimethoxysilane- and decanethiol-derived self-assembled monolayers are selectively deposited in a dielectric-Cu based metal-insulator-metal (MIM) capacitor
Autor:
Youssef Travaly, Anne Jourdain, Leonardus H. A. Leunissen, Kurt Wostyn, Patrick Laermans, Steven de Strycker, Ming Zhao, Greet Verbinnen, Herbert Struyf, Hu Shan Cui, Martine Claes
Publikováno v:
Solid State Phenomena. 187:265-268
Exposure of TSVs from the backside in 3D-SIC is a multistep process [1-. Two steps in this process flow (thinning module) are potentially a high risk for particle contamination: wafer edge trimming and wafer thinning by grinding.
Publikováno v:
Solid State Phenomena. 187:223-226
NMP is a commonly used solvent for removing positive photoresist in 3D applications, especially in electroplating and (micro-) bumping. However, the negative photoresists are more and more preferred in these applications. Unfortunately, NMP is ineffi
Autor:
Fabrice Duval, Harold Philipsen, Eric Beyne, Youssef Travaly, Philippe Soussan, Patrick Jaenen, Bart Swinnen, Yann Civale, Deniz Sabuncuoglu Tezcan
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 1:833-840
In this paper, we report on the processing and the electrical characterization of a 3-D-wafer level packaging through-silicon-via (TSV) flow, using a polymer-isolated, Cu-filled TSV, realized on thinned wafers bonded to temporary carriers. A Cu/Sn mi
Autor:
Wim Dehaene, Erik Sleeckx, A. Van Ammel, J. Van Aelst, Silvia Armini, Eric Beyne, J. Coenen, G. Katti, J. Van Olmen, Youssef Travaly, Jan Vaes, Cedric Huyghebaert
Publikováno v:
Microelectronic Engineering. 88:745-748
In this paper we will highlight key integration issues that were encountered during the development of the 3D-stacked IC Through Silicon Via (TSV) module and present solutions to achieve a robust copper TSV. Electrical performance of the obtained TSV
Autor:
Y. Yang, Bert Verlinden, Alex Radisic, F.Z. Ling, Youssef Travaly, J. Van Olmen, Riet Labie, Chao Zhao, I. De Wolf
Publikováno v:
Microelectronics Reliability. 50:1636-1640
Through-silicon vias (TSVs) are critical components in most 3D architectures. In this paper, fully filled cylindrical Cu TSVs with a diameter of 5 μm and a depth of 25 μm were used to demonstrate quantitative assessment of the fabrication process a
Autor:
Gustaaf Borghs, Guido Maes, Caroline Whelan, Olivier Richard, Arantxa Maestre Caro, Silvia Armini, Youssef Travaly
Publikováno v:
Advanced Functional Materials. 20:1125-1131
A 3-aminopropyltrimethoxysilane-derived self-assembled monolayer (NH 2 SAM) is investigated as a barrier against copper diffusion for application in back-end-of-line (BEOL) technology. The essential characteristics studied include thermal stability t