Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Youri Popoff"'
Autor:
Mikhail Churaev, Rui Ning Wang, Annina Riedhauser, Viacheslav Snigirev, Terence Blésin, Charles Möhl, Miles H. Anderson, Anat Siddharth, Youri Popoff, Ute Drechsler, Daniele Caimi, Simon Hönl, Johann Riemensberger, Junqiu Liu, Paul Seidler, Tobias J. Kippenberg
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabric
Externí odkaz:
https://doaj.org/article/189a2ebda8a84d59853c826afd8dfb6e
Autor:
Mattia Halter, Laura Bégon-Lours, Marilyne Sousa, Youri Popoff, Ute Drechsler, Valeria Bragaglia, Bert Jan Offrein
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-8 (2023)
Brain-inspired neuromorphic computing is a key technology for processing an ever-growing amount of data. Here, an artificial synapse with dual resistance modulation mechanisms is demonstrated, achieving a dynamic range of 60, an endurance exceeding 1
Externí odkaz:
https://doaj.org/article/8f4acd7863994ad7a59123d6dd57de55
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
A route to scalability for superconducting quantum computation is the modular approach, which however requires coherent microwave-to-optical conversion. Here the authors use gallium phosphide optomechanical crystal cavities for this task, exploiting
Externí odkaz:
https://doaj.org/article/5b260a4a795d4e5e989a4bed69e2158d
Autor:
Mikhail Churaev, Rui Ning Wang, Annina Riedhauser, Viacheslav Snigirev, Terence Blésin, Charles Möhl, Miles Anderson, Anat Siddhart, Youri Popoff, Ute Drechsler, Daniele Caimi, Simon Hönl, Johann Riemensberger, Junqiu Liu, Paul Seidler, Tobias J. Kippenberg
This dataset contains the data presented in the Figures of the paperA heterogeneously integrated lithium niobate-on-silicon nitride photonic platform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7af174ea9306c92b5d8ab8f02530ab91
Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
Autor:
Laura Bégon‐Lours, Mattia Halter, Francesco Maria Puglisi, Lorenzo Benatti, Donato Francesco Falcone, Youri Popoff, Diana Dávila Pineda, Marilyne Sousa, Bert Jan Offrein
Publikováno v:
Advanced Electronic Materials, 8 (6)
Ohmic, memristive synaptic weights are fabricated with a back-end-of-line compatible process, based on a 3.5 nm HfZrO4 thin film crystallized in the ferroelectric phase at only 400 degrees C. The current density is increased by three orders of magnit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3de38a36abf7e33fecaff120d5f21940
https://hdl.handle.net/20.500.11850/538271
https://hdl.handle.net/20.500.11850/538271
Autor:
Youri Popoff, D. Davila, Jean Fompeyrine, Laura Begon-Lours, Mattia Halter, Valeria Bragaglia, A. La Porta, D.F. Falcone, Bert Jan Offrein, Daniel Jubin, Z. Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1275-1281 (2021)
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Device Society, 9
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Device Society, 9
A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN e
Autor:
Viacheslav Snigirev, Annina Riedhauser, Grigory Lihachev, Johann Riemensberger, Rui Ning Wang, Charles Möhl, Mikhail Churaev, Anat Siddharth, Guanhao Huang, Youri Popoff, Ute Drechsler, Daniele Caimi, Simon Hönl, Junqiu Liu, Paul Seidler, Tobias J. Kippenberg
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate an electro-optically tunable hybrid integrated laser self-injection locked to a mode of a heterogeneously integrated lithium-niobate-on-Damascene-silicon-nitride microresonator. An intrinsic linewidth of 3 kHz and a frequency tuning ra
Autor:
Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein
Publikováno v:
Neuromorphic Computing and Engineering, 2 (2)
Two-terminal ferroelectric synaptic weights are fabricated on silicon. The active layers consist of a 2 nm thick WOx film and a 2.7 nm thick HfZrO4 (HZO) film grown by atomic layer deposition. The ultra-thin HZO layer is crystallized in the ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a5e45d11a924af37e3591f37b0c7d7e
https://hdl.handle.net/11380/1274598
https://hdl.handle.net/11380/1274598
Autor:
Mikhail Churaev, Annina Riedhauser, Rui N. Wang, Charles Möhl, Terence Blésin, Miles A. Anderson, Viacheslav Snigirev, Anat Siddharth, Youri Popoff, Ute Drechsler, Daniele Caimi, Simon Hönl, Johann Riemensberger, Junqiu Liu, Paul Seidler, Tobias J. Kippenberg
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate a hybrid LiNbO3-Si3N4 photonic integrated platform with propagation loss of 8.5 dB/m at wafer scale. The platform low insertion loss (4 dB) and precise lithographic control. We also demonstrate a number of applications of the platform.
Autor:
Tommaso Stecconi, Roberto Guido, Luca Berchialla, Antonio La Porta, Jonas Weiss, Youri Popoff, Mattia Halter, Marilyne Sousa, Folkert Horst, Diana Dávila, Ute Drechsler, Regina Dittmann, Bert Jan Offrein, Valeria Bragaglia
Publikováno v:
Advanced electronic materials 8(10), 2200448 (2022). doi:10.1002/aelm.202200448
Advanced electronic materials 8(10), 2200448-(2022). doi:10.1002/aelm.202200448
Advanced Electronic Materials, 8 (10)
Advanced electronic materials 8(10), 2200448-(2022). doi:10.1002/aelm.202200448
Advanced Electronic Materials, 8 (10)
The in-memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von-Neumann computers by reducing the data-transport per arithmetic operation. Crossbar arrays of multilevel memristive devices enable efficient calculations of matri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::542fcf2d30d8d3460aa9e3a76c516b00