Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Youqing, Dong"'
Autor:
Zhao, Rui, Duan, Guoli, Yang, Pengfei, Li, Tianxiao, Guan, Sheng, Yang, Hua, Zhao, Zhenwei, Zhu, Xingen, Liang, Guobiao, Wu, Xin, Leng, Bing, Wang, Yang, Wu, Yina, Zuo, Qiao, Zhang, Lei, Li, ZiFu, Zhou, Yu, Zhao, Kaijun, Dai, Dongwei, Fang, Yibin, Li, Qiang, Huang, Qinghai, Hong, Bo, Xu, Yi, Liu, Jianmin, Kaixia, Zhang, Gong, Chen, Qingzhu, Ann, Yongtao, Zheng, Yingkun, He, Weixing, Bai, Xiaoyu, Kang, Ning, Wang, Min, Guan, Bin, Xu, Guangming, Duan, Li, Li, Liangfu, Zhu, Zhilong, Zhou, Qiuji, Shao, Kaitao, Chang, Liheng, Wu, Qiang, Li, Jianjun, Gu, Kun, Zhang, Yongfeng, Wang, Zhiyu, Zhao, Zhen, Chen, Haowen, Xu, Linyu, Wang, Xinbin, Guo, Chao, Liu, Feng, Fang, Zining, Liu, Yuanyuan, Guo, Hu, Chen, Zhongjun, Yan, Wei, Fang, Wenyan, Lu, Jiang, Li, Jianping, Deng, Zhihong, Li, Xu, Gao, Xiaogang, Wang, Yushu, Dong, Chuangzhong, Li, Song, Liu, Lu, Teng, Yuan, Yuan, Minghua, Shang, Zaiqiang, Zhang, Jing, Wang, Guifeng, Sang, Jiyong, Cheng, Zhen, Zhang, Xiaobing, Zhou, Yan, Chen, Lingfeng, Lai, Youqing, Dong, Guohua, Mao, Jianming, Zhu, Xianliang, Lai, Ziyun, Gao, Shuxin, Song, Minhua, Ye, Yijin, Fan, Xin, Xiang, Han, Peng, Jian, Yan, Wenting, Fang
Publikováno v:
In World Neurosurgery April 2022 160:e23-e32
Publikováno v:
Medicine; 12/1/2023, Vol. 102 Issue 48, p1-8, 8p
Autor:
Shaoming Huang, Keqin Yang, Xiaoxiao Li, Manman Liu, Youqing Dong, Lijie Zhang, Chao Zou, Jieyuan Liang, Yun Yang
Publikováno v:
Physica B: Condensed Matter. 554:35-39
Atomic thinness, excellent transport property and gate-tunable band structure of graphene render it a potential electrode material for assembling ultra thin electronic devices. Here, we present back gate field effect transistor based on exfoliated mo
Autor:
Mei Zhao, Yun Yang, Keqin Yang, Hao Zeng, Yue Hu, Lijie Zhang, Shaoming Huang, Manman Liu, Youqing Dong, Chao Zou
Publikováno v:
Journal of Materials Science. 53:4262-4273
The reduction in size of field-effect transistors (FETs) comprised of 3D semiconductors is confronted with the issues such as short-channel effects, tunneling effects and thermal dissipation. The emergence of transition metal dichalcogenides (TMDCs)
Publikováno v:
Applied Surface Science. 540:148276
Molybdenum ditelluride (MoTe2) is an excellent building block for assembling switching devices owing to its appropriate band gap, tunable p- and n-type conduction. Electron beam lithography (EBL) as a powerful method for electronic device fabrication
Publikováno v:
Solar RRL. 5:2000541
Publikováno v:
Inorganica Chimica Acta. 461:298-300
A novel nickel-organic polyhedron, formulated as [Me2NH]2 [Ni6(H3L)4]·(H6L)·3DMF·3H2O (FJI-10, H6L = Tris-(2-hydroxybenzylidene)benzene-1,3,5-tricarbohydrazide), has been successfully synthesized and structurally characterized. During the self-ass
Publikováno v:
CrystEngComm. 17:8512-8518
In this report, two totally new indium-tetracarboxylate framework isomers based on the same starting tetracarboxylate ligand are presented, namely, [Me2NH2][In(BPTC)]·Guest (InOF-12) and [Hdabco][In(BPTC)]·Guest (InOF-13). Their corresponding cryst
Autor:
Yun Yang, Xiaozhen Geng, Chao Zou, Zhiyong Xiong, Shaoming Huang, Jianli Hu, Youqing Dong, Lanlan Zhai, Haibin Liu
Publikováno v:
Journal of Alloys and Compounds. 617:961-967
Fast ionic conductor acting as catalyst offers an efficient choice to produce one-dimensional nanomaterial with high crystallinity and flexible tolerance for lattice mismatch. We report the colloidal synthesis of CuGaS x Se 2 − x nanoribbons with t
Autor:
Yun Yang, Shaoming Huang, Da-Ming Zhu, Ning Dai, Lijie Zhang, Wei Cao, Youqing Dong, Hongfei Yu, Chao Zou
Publikováno v:
Applied Surface Science. 307:608-614
Intrinsic and Sb-doped CdSe nanobelts (NBs) were synthesized via a thermal evaporation technique. The electrical transport properties of field effect transistors (FETs) fabricated using the NBs were investigated. The results indicate that the Sb-dope