Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Youpin Gong"'
Autor:
Jiahao Yu, Jianxun Liu, Yan Jun Liu, Guotao Pang, Hsing-Lin Wang, Shaoqing Chen, Rui Chen, Zhenhua Ni, Xia Li, Youpin Gong, Ruxue Li, Liyuan Zhang, Guoxin Yin
Publikováno v:
Nanoscale. 12:3692-3700
A mechanistic understanding of perovskite degradation is one of the most urgent issues to push perovskite devices toward commercial applications. Surface coverings will lower the electrical injection and light extraction efficiency of perovskites. Th
Autor:
Ruxue, Li, Shaoqing, Chen, Xia, Li, Guoxin, Yin, Youpin, Gong, Jiahao, Yu, Guotao, Pang, Jianxun, Liu, Yanjun, Liu, Zhenhua, Ni, Liyuan, Zhang, Rui, Chen, Hsing-Lin, Wang
Publikováno v:
Nanoscale. 12(6)
A mechanistic understanding of perovskite degradation is one of the most urgent issues to push perovskite devices toward commercial applications. Surface coverings will lower the electrical injection and light extraction efficiency of perovskites. Th
Autor:
Xianfu Wang, Junwei Chu, Jie Xiong, Chuanhui Gong, Shifeng Qian, Alei Li, Tianyou Zhai, Yang Wang, Xiang Ding, Shangchi Jiang, Chujun Yin, Xiaozong Hu, Youpin Gong, Chaobo Li, Hongbo Wang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(12)
Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-re
Autor:
Liyuan Zhang, Youpin Gong, Judy Z. Wu, Yuan Gan, Yingjie He, Qianxue Chen, Yanfeng Ge, Alei Li, Shengyuan A. Yang, Yulu L. Ren, Rui Chen, Peipei Wang, Kai Zhang
Publikováno v:
Advanced Materials Interfaces. 8:2100491
Publikováno v:
Advanced Electronic Materials. 7:2100548
Autor:
Brent Cook, Dan Ewing, Alex Stramel, Qingfeng Liu, Matthew Casper, Judy Z. Wu, Youpin Gong, Maogang Gong
Publikováno v:
ACS Applied Materials & Interfaces. 9:12728-12733
Two-dimensional (2D) MoS2/graphene van der Waals heterostructures integrate the superior light–solid interaction in MoS2 and charge mobility in graphene for high-performance optoelectronic devices. Key to the device performance lies in a clean MoS2
Publikováno v:
Nano Energy. 30:260-266
Atomically thin transition metal dichalcogenides (TMDs) have gained much attention due to their unique optoelectronic properties. However, besides the plenty of experimental attempts, the optoelectronic simulation, which is useful for uncovering the
Publikováno v:
The Journal of Physical Chemistry C. 120:24482-24490
Time-resolved two-photon photoemission spectroscopy (TR-TPPE) was employed to investigate the hot exciton relaxation and exciton trapping dynamics in semiconductive, single-walled carbon nanotube thin films. Compared to other conventional optical ult
Publikováno v:
Carbon. 96:203-211
A systematic study shows that continuous graphene with controllable number of layers and stacking structure can be directly grown on SiO2/Si without any metal catalysts by chemical vapor deposition. Raman spectroscopy and mapping confirm the monolaye
Autor:
Alei, Li, Qianxue, Chen, Peipei, Wang, Yuan, Gan, Tailei, Qi, Peng, Wang, Fangdong, Tang, Judy Z, Wu, Rui, Chen, Liyuan, Zhang, Youpin, Gong
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(6)
2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficul