Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Youngwoo Ji"'
Publikováno v:
Sensors, Vol 23, Iss 4, p 1862 (2023)
This paper presents an ultra-low-power voltage reference designed in 180 nm CMOS technology. To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering
Externí odkaz:
https://doaj.org/article/54fa08d8d84742b5ba1c19d1ef88033b
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:4053-4057
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d7966ac1133fbdca18cacd9eb62d9e
https://doi.org/10.1109/tcsii.2022.3185495
https://doi.org/10.1109/tcsii.2022.3185495
Autor:
Youngwoo Ji, Jae-Yoon Sim
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 30:840-843
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7bd6f5b025f0204e07e99df70beb3c2
https://doi.org/10.1109/tvlsi.2022.3158729
https://doi.org/10.1109/tvlsi.2022.3158729
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:73-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ea02d1c06dfca2618008b7b0278dbd
https://doi.org/10.5573/jsts.2021.21.1.073
https://doi.org/10.5573/jsts.2021.21.1.073
Autor:
Gabriele Atzeni, Rosario Incandela, Youngwoo Ji, Alessandro Novello, Hesam Ghiasi, Giorgio Cristiano, Jiawei Liao, Qiuting Huang, Taekwang Jang
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e43a727140b28b1e7f5888892c9de8bf
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830399
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830399
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 67:1549-1553
This brief presents a temperature sensor that combines a leakage-based bandgap-Vth reference and an asynchronous SAR. The proposed sensor is implemented with 0.18 $\mu \text{m}$ CMOS technology. By sampling leakage-based biases directly in the SAR AD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e817519a6d5f7e0ddd3f981f2224386e
https://doi.org/10.1109/tcsii.2020.3010501
https://doi.org/10.1109/tcsii.2020.3010501
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746239b0d7c7edb06f6355a3a112b683
https://doi.org/10.1109/isscc42614.2022.9731730
https://doi.org/10.1109/isscc42614.2022.9731730
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:3281-3291
This article presents a methodology to design a circuit to compensate for process skew by exploiting an inherent dimension-dependent effect of process skew on change in the threshold voltage. We design a voltage reference circuit with a hybrid archit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ba5e689141ec24a77ec8aa585eb319
https://doi.org/10.1109/jssc.2019.2942356
https://doi.org/10.1109/jssc.2019.2942356
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:2310-2321
This paper presents detailed analyses on leakage-based bandgap reference (BGR) circuit for ultralow-power applications. Design considerations for power supply rejection ratio and noise characteristics are provided with pole/zero analysis. Startup set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe73cd719ff3a99fb535156eb4b373b
https://doi.org/10.1109/tvlsi.2018.2852802
https://doi.org/10.1109/tvlsi.2018.2852802
Publikováno v:
ISSCC
A voltage reference circuit is an essential block of a system to generate various internal voltages. Since it consumes static power in standby modes, it plays an important role in energy management of battery-limited applications. The bandgap referen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d88ccf3040a115f8845c2a6be5e663e
https://doi.org/10.1109/isscc.2019.8662538
https://doi.org/10.1109/isscc.2019.8662538