Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Youngtek Oh"'
Autor:
Wonhee Ko, Hyo Won Kim, Yeonchoo Cho, JiYeon Ku, Hyeokshin Kwon, Youngtek Oh, Jin-Wook Jung, Insu Jeon, Hwansoo Suh, Young Kuk, Sung Woo Hwang
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085325-085325-6 (2020)
Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the l
Externí odkaz:
https://doaj.org/article/a5a56a4a02dd406f9b987a9ef12a28da
Autor:
Seongjun Park, Taehwan Jeong, Euyheon Hwang, Hongki Min, Young Jae Song, Samudrala Appalakondaiah, Sungwoo Hwang, Insu Jeon, Youngtek Oh, Hyeokshin Kwon
Publikováno v:
Nano Research. 13:2534-2540
Using scanning tunneling microscopy/spectroscopy (STM/STS), we examine quasiparticle scattering and interference properties at the surface of WTe2. WTe2, layered transition metal dichalcogenide, is predicted to be a type-II Weyl semimetal. The Weyl f
Publikováno v:
Physical Review B. 104
Electrides are ionic compounds in which electrons behave as anions in the interior of a positively charged framework. As a layered electride, ${\mathrm{Gd}}_{2}\mathrm{C}$ receives attention because of its ferromagnetism. Although previous research h
Autor:
Kaixuan Zhang, Insu Jeon, Hyun Woo Lee, Suhan Son, You-Jin Lee, Matthew J. Coak, Inho Hwang, Dohun Kim, Dong-Su Ko, Changgan Zeng, Je-Geun Park, Jung Hyun Kim, Youngtek Oh
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::611ba8d004eb0078dc2b94edde66cda5
http://arxiv.org/abs/2108.13022
http://arxiv.org/abs/2108.13022
Autor:
Hwansoo Suh, Joohyun Lee, Young Jae Song, Seongjun Park, Hyeokshin Kwon, Youngtek Oh, Insu Jeon, Dong-Jin Yun
Publikováno v:
Physica B: Condensed Matter. 561:132-135
The one-dimensional form of silicon (Si) has been attracting significant scientific and industrial interest again in the field of Li-ion batteries as well as electronic devices, offering higher reversible capacity than carbon materials in an anode. I
Autor:
Insu Jeon, Wonhee Ko, Won-Jae Joo, Hyo Won Kim, JiYeon Ku, Seongjung Park, Youngtek Oh, Yeonchoo Cho, Sungwoo Hwang
Publikováno v:
The Journal of Physical Chemistry Letters. 9:7059-7063
The direct growth of graphene on a semiconducting substrate opens a new avenue for future graphene-based applications. Understanding the structural and electronic properties of the graphene on a semiconducting surface is key for realizing such struct
Autor:
Inho, Hwang, Matthew J, Coak, Nahyun, Lee, Dong-Su, Ko, Youngtek, Oh, Insu, Jeon, Suhan, Son, Kaixuan, Zhang, Junghyun, Kim, Je-Geun, Park
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 31(50)
The widely-studied ferromagnetic van-der-Waals (vdW) metal Fe
Autor:
Youngtek Oh, Wonhee Ko, Jung Jinwook, Hwansoo Suh, Hyo Won Kim, Hyeokshin Kwon, Insu Jeon, Young Kuk, Yeonchoo Cho, Sungwoo Hwang, JiYeon Ku
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085325-085325-6 (2020)
Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the l
Publikováno v:
The Journal of Physical Chemistry C. 119:27721-27726
Pinning single molecules at desired positions can provide opportunities to fabricate bottom-up designed molecular machines. Using the combined approach of scanning tunneling microscopy and density functional theory, we report on tip-induced anchoring
Autor:
Hyeokshin, Kwon, Kiyoung, Lee, Jinseong, Heo, Youngtek, Oh, Hyangsook, Lee, Samudrala, Appalakondaiah, Wonhee, Ko, Hyo Won, Kim, Jin-Wook, Jung, Hwansoo, Suh, Hongki, Min, Insu, Jeon, Euyheon, Hwang, Sungwoo, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(41)
Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semico