Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Youngshin Eum"'
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The GaN MOS-HFET we have proposed could significantly reduce the maximum electric field of the MOS gate to 1/3 when the high reverse bias is applied. With this effect, High Temperature Reverse Bias (HTRB) characteristics were greatly improved compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8335ba2049e06c48c1e535342681af2
https://doi.org/10.1109/iciprm.2019.8819159
https://doi.org/10.1109/iciprm.2019.8819159
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A new MOS-HFET structure of a GaN power device for highly reliable GaN MOS gates has been designed. A normally-on JFET structure is fabricated between the gate and drain of the GaN MOS-HFET. By using this technology, the reliability of the gate insul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58212aa0307931ff2c047d8070497641
https://doi.org/10.23919/ispsd.2017.7988921
https://doi.org/10.23919/ispsd.2017.7988921
Publikováno v:
Japanese Journal of Applied Physics. 58:076504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc1015139d8dbc9faa729e1710770d04
https://doi.org/10.7567/1347-4065/ab264f
https://doi.org/10.7567/1347-4065/ab264f