Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Youngmo Koo"'
Autor:
Changro Lee, Youngmo Koo
Publikováno v:
PLoS ONE, Vol 18, Iss 10, p e0293147 (2023)
Using point-of-sales (POS) data, the sales trends of 48 member stores of a Korean restaurant franchise during the COVID-19 pandemic were analyzed. As daily sales are nested in each member store of a franchise, the hierarchical structure of POS data w
Externí odkaz:
https://doaj.org/article/9f58d1aa95f34ed6847e905c29543e02
Publikováno v:
SID Symposium Digest of Technical Papers. 53:391-394
Autor:
Yeonghwan Bae, Youngmo Koo
Publikováno v:
Journal of Biosystems Engineering. 46:485-495
Autor:
Youngmo Koo
Publikováno v:
Journal of Biosystems Engineering. 44:1-11
As interest in the variable rate application (VRA) increases, it is necessary to study the characteristics of the nozzle pressure applied for unmanned aerial applications. In this study, therefore, we analyzed the performance of nozzle pressure respo
Publikováno v:
Journal of the Microelectronics and Packaging Society. 19:19-23
최근 발광다이오드(LED)의 출력 성능을 높이고, 전력 소비를 줄이기 위해 LED 패키지 분야에서 실리콘 기판 연구가 집중되고 있다. 본 연구에서는 공정 비용이 낮고 생산성이 높은 습식 식각
Publikováno v:
SPIE Proceedings.
The defect control of the attenuated-PSM is compared with that of the conventional binary intensity mask (BIM), because the fabrication process for the att-PSM tends to generate more defects than that of the BIM. To repair a defective att. PSM, a sim
Publikováno v:
SPIE Proceedings.
Recently, the miniaturization of the design rule of memory devices pushes the minimum feature sizes down to sub- wavelengths of the exposure tools. The design of a memory device comprises not only the dense patterns with critical small size in the ce
Autor:
Ki-Ho Baik, Ikboum Hur, Sang-Sool Koo, Keuntaek Park, Il-Hyun Choi, Chul Shin, Lee-Ju Kim, Youngmo Koo
Publikováno v:
SPIE Proceedings.
ArF DUV ((lambda) equals 193 nm) lithography is rapidly emerging after 248 nm lithography because of the demand for further resolution improvement and wider Depth Of Focus (DOF). However, the 193 nm lithography requires innovative development in vari
Publikováno v:
SPIE Proceedings.
Photomask is one of the most critical technologies for lithography. Optical lithography at resolution limit is a non- linear pattern transfer process. OPC (Optical Proximity Correction) technology has been used in the semiconductor industry for contr
Autor:
Ki-Ho Baik, Kyung-Han Nam, Keuntaek Park, Sang-Sool Koo, Youngmo Koo, Il-Ho Lee, Kyeong-Mee Yeon
Publikováno v:
SPIE Proceedings.
We have investigated the perfomiances of positive Chemically Amplified Resist (CAR) withHigh Acceleration Voltage System on mask fabrication, widely. As we had expected, the resolutionand pattern fidelity both after development and after etching were