Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Youngjae Shim"'
Publikováno v:
2018 23rd Opto-Electronics and Communications Conference (OECC).
SK developed NG-PON2 system for next generation optical access network. As the result, SK announced the world first NG-PON2 field trial in October 2016 and started 10G Internet service for the customers in July 2017. Basic technologies enabling NG-PO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd38fb0df261da934548c85f8163dbb8
https://doi.org/10.1109/oecc.2018.8730085
https://doi.org/10.1109/oecc.2018.8730085
Publikováno v:
ICTC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3517e23c5a7ff3e1fae96dab3fbf07
https://doi.org/10.1109/ictc.2014.6983101
https://doi.org/10.1109/ictc.2014.6983101
Autor:
James F. Cordaro, Youngjae Shim
Publikováno v:
Journal of the American Ceramic Society. 71:184-188
Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO-Bi2O3 and ZnO-BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO-Bi2O3 system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c57c5785d9e6e73188d265e5e5d6cb
https://doi.org/10.1111/j.1151-2916.1988.tb05026.x
https://doi.org/10.1111/j.1151-2916.1988.tb05026.x
Publikováno v:
Journal of Applied Physics. 66:5608-5612
Pulse response characteristics are reported for simple varistor materials in the ZnO‐Bi2O3‐MnO2 system. It is shown that small additions of Li2O or In2O3 can enhance or eliminate the materials inductive behavior, which is responsible for voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21af205c8cfd012013992afe906bd5dd
https://doi.org/10.1063/1.343666
https://doi.org/10.1063/1.343666
Autor:
Youngjae Shim, James F. Cordaro
Publikováno v:
ChemInform. 19
Measurements of ac conductance between 30 and 350 K on the title systems show a common electron trap at 0.33 eV below the conduction band.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587ebdb905db15c675fba3f47aa89b21
https://doi.org/10.1002/chin.198822013
https://doi.org/10.1002/chin.198822013