Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Younghun Hwang"'
Autor:
Chang Won Ahn, Jae Hun Jo, Jong Chan Kim, Hamid Ullah, Sangkyun Ryu, Younghun Hwang, Jin San Choi, Jongmin Lee, Sanghan Lee, Hyoungjeen Jeen, Young-Han Shin, Hu Young Jeong, Ill Won Kim, Tae Heon Kim
Publikováno v:
Journal of Materiomics, Vol 6, Iss 4, Pp 651-660 (2020)
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were
Externí odkaz:
https://doaj.org/article/375eaec571ad4903a9f1b2918f087554
Autor:
Sung Hoon Park, Seungki Jo, Beomjin Kwon, Fredrick Kim, Hyeong Woo Ban, Ji Eun Lee, Da Hwi Gu, Se Hwa Lee, Younghun Hwang, Jin-Sang Kim, Dow-Bin Hyun, Sukbin Lee, Kyoung Jin Choi, Wook Jo, Jae Sung Son
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-10 (2016)
Thermoelectric devices are often rigid and do not adapt conformally to surfaces. Here, Park et al. prepare a Bi2Te3-based thermoelectric paint, containing a Sb2Te3chalcogenidometalate additive, that can be paint-brushed onto curved surfaces and form
Externí odkaz:
https://doaj.org/article/647c71c7145b474e8657bbe93682dd6f
Publikováno v:
AIP Advances, Vol 3, Iss 5, Pp 052129-052129 (2013)
The temperature dependence of the interband transition in an α-V2O5 film was investigated using absorption and photoluminescence spectral measurements at a temperature range of 10–300 K. Transmission measurements in the experimental temperature ra
Externí odkaz:
https://doaj.org/article/e15e1881ae734e149e3e222d2d8d6e2b
Publikováno v:
Current Applied Physics. 44:150-157
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77731b88f6e7554700844e16d171b6cf
https://doi.org/10.1016/j.cap.2022.10.006
https://doi.org/10.1016/j.cap.2022.10.006
Autor:
Nguyen Huu Lam, Phuong Lien Nguyen, Byoung Ki Choi, Trinh Thi Ly, Ganbat Duvjir, Tae Gyu Rhee, Yong Jin Jo, Tae Heon Kim, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Younghun Hwang, Young Jun Chang, Jaekwang Lee, Jungdae Kim
Publikováno v:
ACS Nano. 16:11227-11233
NiTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f24762fe58f777220e852d73223755fd
https://doi.org/10.1021/acsnano.2c04301
https://doi.org/10.1021/acsnano.2c04301
Autor:
Furqanul Hassan Naqvi, Jae-Hyeon Ko, Tae Heon Kim, Chang Won Ahn, Younghun Hwang, Mahshab Sheraz, Seungdo Kim
Publikováno v:
Journal of the Korean Physical Society. 81:230-240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b98073deecd96d6400e47538e66b264
https://doi.org/10.1007/s40042-022-00505-y
https://doi.org/10.1007/s40042-022-00505-y
Autor:
Younghun Hwang, Yang Ha
Publikováno v:
New Physics: Sae Mulli. 72:348-354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4338e0e02d129c84b733360637445f4d
https://doi.org/10.3938/npsm.72.348
https://doi.org/10.3938/npsm.72.348
Autor:
Yang Ha, Tae Heon Kim, Sujung Park, Jin San Choi, Chang Won Ahn, Van Quang Ngugen, Shinuk Cho, Younghun Hwang
Publikováno v:
Journal of the Korean Physical Society. 79:1057-1062
The epitaxial growth of high-quality thin films provides a powerful method for the rapid preparation of new materials and discovery of materials with promising properties. Here, we report the effect of substrate temperature on the epitaxial growth of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d14712062e0297b37005e804727c9c7
https://doi.org/10.1007/s40042-021-00337-2
https://doi.org/10.1007/s40042-021-00337-2
Publikováno v:
Journal of the Korean Physical Society. 79:552-556
Iron chalcogenides have been widely studied due to their intriguing superconducting and magnetic properties. We investigate the intrinsic defects existing in single-crystal FeTe via scanning tunneling microscopy (STM). The cleavage surfaces of FeTe s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d37718d02053b67b39b4494f986f0df
https://doi.org/10.1007/s40042-021-00269-x
https://doi.org/10.1007/s40042-021-00269-x
Publikováno v:
Current Applied Physics. 20:212-218
We investigated the spectral-dependent dielectric function and temperature-dependent bandgap energy of layered chalcogenide FeIn2Se4 crystals. The critical-point energy and Lorentzian broadening were analyzed by fitting second-derivative spectra usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a1a9aaf2b52658ec8da4046055b396
https://doi.org/10.1016/j.cap.2019.11.005
https://doi.org/10.1016/j.cap.2019.11.005