Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Youngdon Jung"'
Autor:
Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeoncheon Seol, Hyunsoo Lee, Jaehyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Publikováno v:
DAC
We present a low-overhead ransomware-proof SSD, called Ran-somBlocker (RBlocker). RBlocker provides 100% full protections against all possible ransomware attacks by delaying every data deletion until no attack is guaranteed. To reduce storage overhea
Publikováno v:
IEEE Transactions on Computers. :1-1
As ransomware attacks have been prevalent, it becomes crucial to make anti-ransomware solutions that defend against ransomwares. In this article, we propose a new ransomware defense system, called SSD-Insider++ , which prevents users’ files from be
Publikováno v:
ICDCS
Ransomware is a malware that encrypts victim's data, where the decryption key is released after a ransom is paid by the data owner to the attacker. Many ransomware attacks were reported recently, making anti-ransomware a crucial need in security oper
Publikováno v:
DAC: Annual ACM/IEEE Design Automation Conference; 2019, Issue 56, p895-900, 6p
Publikováno v:
International Journal of Circuit Theory and Applications. 42:394-406
The conventional magnetic tunneling junction MTJ-based non-volatile D flip-flop NVDFF has a slow D-Q delay and a tradeoff between its D-Q delay and its sensing current. In addition, a sufficient write current cannot be obtained with the core device,
Autor:
Jin-woo Lee, Sunghoon Ahn, Byung-Ryul Kim, Kichang Chun, Pil Seon Yoo, Taisik Shin, Yonghwan Hong, Sungwook Choi, Nam-Kyeong Kim, Kunwoo Park, Wanseob Lee, Sunghyun Jung, Tae-Yun Kim, Sungdae Choi, Byoung-Young Kim, Ingon Yang, Hyun-Chul Cho, Jaehyeon Shin, Hyunjong Jin, Duckju Kim, Youngdon Jung, Jinwoong Kim
Publikováno v:
ISSCC
This paper presents a 64Gb MLC NAND-Flash memory fabricated with 16nm CMOS process technology to achieve high density and as small as 93.4mm2 die area. The chip consists of two planes of 1072 blocks each. A block consists of a string with 128 cells a
Publikováno v:
ISOCC
The NVFF (Non-Volatile Flip-flop) using a MTJ is one of the powerful solutions for the low power system. However, the previous NVFF cannot provide a sufficient current to write the data into the MTJ in deep submicron technology. This problem occurs d