Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Youngcheol, Chae"'
Autor:
Moonhyung Jang, Xiyuan Tang, Yong Lim, John G. Kauffman, Nan Sun, Maurits Ortmanns, Youngcheol Chae
Publikováno v:
IEEE Open Journal of the Solid-State Circuits Society, Vol 3, Pp 145-161 (2023)
The energy efficiency of analog-to-digital converters (ADCs) has improved steadily over the past 40 years, with the best reported ADC efficiency improving by nearly six orders of magnitude over the same period. The best figure-of-merit (FoM) is achie
Externí odkaz:
https://doaj.org/article/9be28b97db52404e958583909920f27f
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:961-971
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:827-837
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:4719-4723
Autor:
Changuk Lee, Byeongseol Kim, Jejung Kim, Sangwon Lee, Taejune Jeon, Woojun Choi, Sunggu Yang, Jong-Hyun Ahn, Joonsung Bae, Youngcheol Chae
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3212-3227
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3048-3057
Publikováno v:
2023 IEEE Custom Integrated Circuits Conference (CICC).
Autor:
Byungchoul Park, Byungwook Ahn, Hyun-Seung Choi, Jinwoong Jeong, Kangmin Hwang, Taewoo Kim, Myung-Jae Lee, Youngcheol Chae
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Youngcheol Chae, Taewoong Kim
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:5029-5037
This paper presents a buffer-embedded noise-shaping SAR ADC, whose input buffer separates the capacitive DAC (CDAC) and the sampling capacitor (C $_S$ ) at the input and output of the input buffer. This compensates for the non-linearity of the input
Autor:
Youngcheol Chae, Chanmin Park, Myung-Jae Lee, Injun Park, Yoondeok Na, Byungchoul Park, Woojun Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2956-2967
This article presents a 64 $\times $ 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay