Zobrazeno 1 - 10
of 15
pro vyhledávání: '"YoungTak Lee"'
Publikováno v:
JTCVS Techniques.
Autor:
Youngtak Lee1, Doug Link1 doug_link@starkey.com
Publikováno v:
Journal of Microelectronic & Electronic Packaging. 2016 1st Quarter, Vol. 13 Issue 1, p1-5. 5p.
Autor:
Youngtak Lee, Douglas F. Link
Publikováno v:
International Symposium on Microelectronics. 2017:000201-000207
Due to rapid growth of the microelectronics industry, packaged devices with small form factors, low costs, high power performance, and increased efficiency have become of high demand in the market. To realize the current market development trend, fli
Autor:
Youngtak Lee, Douglas F. Link
Publikováno v:
International Symposium on Microelectronics. 2016:000111-000116
Due to rapid growth of the microelectronics industry, packaged devices with small form factors, low costs, high power performance, and increased efficiency have become of high demand in the market. To realize the current market development trend, fli
Autor:
Douglas F. Link, Youngtak Lee
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 13:1-5
The demand for greater performance of hearing instruments in smaller form factors continues to drive the need for miniaturization of microelectronic packages. This article reports how through-silicon-via (TSV) technology was used to shrink the size o
Publikováno v:
ISQED
On-chip power delivery networks (PDNs) for today's microprocessors and systems-on-chip (SoCs), which are characterized by dynamic supply voltage, many embedded integrated VRs (IVRs), lower decoupling-capacitor, high current ranges, multiple power mod
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2014.
Autor:
Keysoo Shin, Ho-Jin Jeong, KeunHo Ryu, Bongsu Choi, Hankyo Seo, Youngtak Lee, Jeon Jeong-U, Ki-Tae Jeong
Publikováno v:
Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference on Communications.
We present a new method to flatten the gain profile of optical amplifiers; inserting an optical isolator in the middle of an Er doped fiber amplifier (EDFA). A flat gain bandwidth of more then 30 nm was experimentally obtained by this method. This is
Publikováno v:
MATEC Web of Conferences; 10/25/2016, Vol. 81, p1-5, 5p, 1 Color Photograph, 1 Chart, 6 Graphs
Publikováno v:
Fifteenth International Symposium on Quality Electronic Design; 01/01/2014, p68-75, 8p