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Autor:
Lior Shoval, Byung-Gook Kim, Christophe Couderc, Hee-Bom Kim, Young-su Sung, Sukho Lee, Myoung-Soo Lee, Sang-Gyun Woo, Michael Ben Yishai, Han-Ku Cho
Publikováno v:
SPIE Proceedings.
Lithographic process steps used in today's integrated circuit production require tight control of critical dimensions (CD). With new design rules dropping to 32 nm and emerging double patterning processes, parameters that were of secondary importance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae528b52b7aa37364b3a73c9015d5a47
https://doi.org/10.1117/12.793061
https://doi.org/10.1117/12.793061
