Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Young-Mog Ham"'
Publikováno v:
Microelectronic Engineering. :179-182
A new Monte Carlo simulator for low energy electron beam lithography was developed, which includes discrete energy loss models to represent secondary electron generation and straggling effects in energy loss. The models are based on the Moller cross-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6bf25afaa1b3f9dc4da994405e30121
https://doi.org/10.1016/s0167-9317(98)00040-9
https://doi.org/10.1016/s0167-9317(98)00040-9
Publikováno v:
Microelectronic Engineering. 35:125-128
A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e92aa50dd8d1af7d50e4aaf18923809
https://doi.org/10.1016/s0167-9317(96)00170-0
https://doi.org/10.1016/s0167-9317(96)00170-0
Autor:
Wei Wu, Matt Lassiter, Chris Progler, Jonathan L. Cobb, Lloyd C. Litt, Young-Mog Ham, Will Conley, Kevin Lucas, Mike Cangemi, Bernie Roman, Marc Cangemi, Bryan S. Kasprowicz, Rand Cottle, Nicolo Morgana
Publikováno v:
SPIE Proceedings.
Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dfafea430c136f931ea857f690adbdf
https://doi.org/10.1117/12.659390
https://doi.org/10.1117/12.659390
Autor:
Will Conley, Nicoló Morgana, Bryan S. Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd C. Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a30f9a7b9886caeef72765bd6cda0f7
https://doi.org/10.1117/12.659353
https://doi.org/10.1117/12.659353
Autor:
Young-Mog Ham, John Garcia, John Gookassian, Patrick M. Martin, Christopher J. Progler, Brian Dillon, Robert Pack, Mark E. Mason, Victor V. Boksha, Mitch Heins
Publikováno v:
SPIE Proceedings.
Time-to-mask (ttm) has been growing exponentially in the subwavelength era with the increased application of advanced RET's (Resolution Enhancement Technology). Not only are a greater number of design/mask layers impacted but more-and-more layers als
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbc0f877b1af1a39dd75cf8cd924ce9
https://doi.org/10.1117/12.633180
https://doi.org/10.1117/12.633180
Autor:
Christopher J. Progler, Patrick M. Martin, Zongchang Yu, Rick Gray, Bryan S. Kasprowicz, Young-Mog Ham, James N. Wiley, Jun Ye
Publikováno v:
SPIE Proceedings.
Lithography simulation is an integral part of semiconductor manufacturing. It is not only required in lithography process development, but also in RET design, RET verification, and process latitude analysis, from library cells to full-chip tape out.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d6897cf27b6cf7654e4a9de64024a3
https://doi.org/10.1117/12.617366
https://doi.org/10.1117/12.617366
Publikováno v:
SPIE Proceedings.
In order to reduce mask making costs and improve wafer printability it is advantageous to determine machine parameters that will create highest probability of successful mask yield and mask image at CD and inspection. Proper simulation of actual prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d7228d0fe011d5dabf48c57432845cc
https://doi.org/10.1117/12.617060
https://doi.org/10.1117/12.617060
Autor:
Chris Progler, Young-Mog Ham, Wei Wu, Mark Smith, Lloyd C. Litt, Mike Cangemi, Rusty Carter, Rand Cottle, Bernie Roman, Jonathan L. Cobb, Kevin Lucas, Bryan S. Kasprowicz, Will Conley, Marc Cangemi, Matt Lassiter
Publikováno v:
Optical Microlithography XVIII.
The lithography prognosticator of the early 1980"s declared the end of optics for sub-0.5μm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c89af5aa9e78836a00842ac2b95879c9
https://doi.org/10.1117/12.601584
https://doi.org/10.1117/12.601584
Autor:
Marc Cangemi, Lloyd C. Litt, Nicolo Morgana, Michael Cangemi, Christopher J. Progler, Young-Mog Ham, Rand Cottle, Will Conley, Wei Wu, Bernie Roman, Jonathan L. Cobb, Bryan S. Kasprowicz
Publikováno v:
Optical Microlithography XVIII.
Today the industry is filled with intensity-balanced c:PSM and much more focus is being placed on innovative approaches such as CPL (and in conjunction with IML for Contacts) and tunable transmission embedded attenuating phase shift mask (TT-EAPSM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8716a752d94b0e719b98074e6e669c
https://doi.org/10.1117/12.601011
https://doi.org/10.1117/12.601011
Autor:
Chang-Nam Ahn, Ki-Soo Shin, Wan-Ho Kim, Se-Young Oh, Hyoung-Soon Yune, Hee-Bom Kim, Seo-Min Kim, Young-Mog Ham
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).
Lately, photolithography is seen as the bottleneck to sub-0.1 /spl mu/m patterning. Namely, the miniaturization of the design rule pushes the pattern sizes in the peripheral region as well as in the cell region into the resolution limit of exposure t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9654b3c1c4dd172df709a9409443376
https://doi.org/10.1109/imnc.2001.984036
https://doi.org/10.1109/imnc.2001.984036