Výsledky vyhledávání - "Young-June Park"

Akademický článek

Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

Autor: Sungman Rhee, Daewon Kim, Kyeongyeon Kim, Seongwook Choi, Byung-Gook Park, Young June Park

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 8, Pp 213-222 (2020)

We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first

Externí odkaz: https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c7

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Japan’s Decision to Equip with Aircraft Carriers and Its Impact on Maritime Strategy

Autor: Young-June Park

Publikováno v: Review of International and Area Studies. 31:1-29

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11139866b6e5c3abd85fad842c59fee9
https://doi.org/10.56115/rias.2022.03.31.1.1

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Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

Autor: Kyeongyeon Kim, Sungman Rhee, Byung-Gook Park, Dae-Won Kim, Young June Park, Seong-Wook Choi

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 8, Pp 213-222 (2020)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::965992e20ea5b1b488c5ec90886bff28
https://ieeexplore.ieee.org/document/8981987/

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Akademický článek

Integrating Metal-Oxide-Decorated CNT Networks with a CMOS Readout in a Gas Sensor

Autor: Suhwan Kim, Minhee Yun, Young June Park, Seong-Hyeon Hong, Hyunjoong Lee, Sanghoon Lee, Dai-Hong Kim, David Perello

Publikováno v: Sensors, Vol 12, Iss 3, Pp 2582-2597 (2012)

We have implemented a tin-oxide-decorated carbon nanotube (CNT) network gas sensor system on a single die. We have also demonstrated the deposition of metallic tin on the CNT network, its subsequent oxidation in air, and the improvement of the lifeti

Externí odkaz: https://doaj.org/article/1645511eea70425780634abafe2904c7

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한반도 비핵ㆍ평화프로세스와 일본 아베 정부의 입장

Autor: 박영준 ( Young-june Park )

Publikováno v: Korea and World Politics. 35:193-221

국제학계에서 종전의 일본 외교는 수동적, 반응적이라는 평가가 지배적이었다. 그러나 아베 총리는 이전의 일본 정치세력과 달리 보통국가론 혹은 내셔널리스트의 입장을 강하게 보이면서

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84a99bbca8323771db627267af612c2d
https://doi.org/10.17331/kwp.2019.35.1.007

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A New FOWLP Platform for Hybrid Optical Packaging - Demonstration on 100Gbps Transceiver

Autor: David Dongwoo Park, Sukyoon Oh, Seungman Han, Yoonyoung Bae, Seong-Wook Choi, Young June Park

Publikováno v: OFC

The Fan Out Wafer Level Packaging, widely used in the silicon semiconductor system, is introduced for all-in-one hybrid optical package with small form factor, potentially higher performance, and expendability to on-board/co-packaged optical intercon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ccb55b5398390ebc5e5e17a7f627fb2
https://doi.org/10.1364/ofc.2021.m2b.1

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Detection of Thermal Transport on Chip Using Gate-Induced Drain Leakage Current

Autor: Nak Won Yoo, Seoungwook Choi, Jun Yeon Yun, Young June Park

Publikováno v: Journal of nanoscience and nanotechnology. 20(8)

In this paper, we propose a method to detect thermal transport suitable in nanometers scale. It is feasible using the GIDL-biased MOSFET as thermal sensor. It is because the GIDL current is occurred due to the band-to-band tunnelling of the electron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffbf0a82685942634379adc6fb20ebbb
https://pubmed.ncbi.nlm.nih.gov/32126685

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Detection of Hot Carrier Generated Phonon Using the Gate-Induced Drain Leakage in the Silicon Chip

Autor: Jun Yeon Yun, Nak Won Yoo, Young June Park

Publikováno v: IEEE Transactions on Electron Devices. 65:3915-3921

We report a method and an experiment to directly estimate the phonon energy generated by hot electrons during the MOSFET operation. By measuring the gate-induced drain leakage (GIDL) current of the MOSFET (as a phonon sensor), we were able to measure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5ef9ce50368503260851fb865d97f453
https://doi.org/10.1109/ted.2018.2855976

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Highly efficient and continuous production of few-layer black phosphorus nanosheets and quantum dots via acoustic-microfluidic process

Autor: Dong-Pyo Kim, Young-June Park, Chang-Ho Choi, Xiaoge Wu

Publikováno v: Chemical Engineering Journal. 333:336-342

Few-layer black phosphorus (BP) with tunable band gap and excellent electronic properties is an emerging two dimensional semiconductor that has been demonstrated to be useful in many applications. Here we introduce an acoustic-microfluidic (AM) proce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ca89ffcccb8d92f39f5fe09d1a2eca3
https://doi.org/10.1016/j.cej.2017.09.144

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