Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Young-Je Yun"'
Publikováno v:
Physica C: Superconductivity. 486:13-16
Current–voltage characteristics measurements suggest that the superconducting-to-normal transition in triangular Josephson-junction arrays with the frustration index f = 1/4 and 1/3, which may have excitations of zero-energy domain walls, occurs in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9482a621343116d003a882d8eba2bc33
https://doi.org/10.1016/j.physc.2013.01.005
https://doi.org/10.1016/j.physc.2013.01.005
Publikováno v:
Physica C: Superconductivity. 369:321-324
We have studied experimentally critical behaviors of vortex-lattice-melting transitions in a square Josephson junction array with quenched bond disorder, with a focus on frustrations f=1/2, 2/5, 1/3, and 1/5. Critical scaling analyses of the current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc02dde9fba3dfd55da5e81bfebafc4
https://doi.org/10.1016/s0921-4534(01)01268-0
https://doi.org/10.1016/s0921-4534(01)01268-0
Publikováno v:
Physica C: Superconductivity. 369:331-334
Current–voltage ( I – V ) characteristics have been investigated experimentally for a square Josephson array with a dilute vortex density f . Critical scaling analyses of the I – V data indicate that vortices in the real array undergo a melting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e668b143eec5c82e83068202ffb8af
https://doi.org/10.1016/s0921-4534(01)01270-9
https://doi.org/10.1016/s0921-4534(01)01270-9
Publikováno v:
Journal of Physics and Chemistry of Solids. 67:172-174
The critical properties of a vortex-solid-melting transition in triangular Josephson junction arrays (JJA's) exposed to a magnetic field are studied with a focus on the fillings f =1/2, 2/5, and 1/36 by analyzing the superconducting scaling behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af44b6a2610f95612efdb56923b968e3
https://doi.org/10.1016/j.jpcs.2005.10.095
https://doi.org/10.1016/j.jpcs.2005.10.095
Publikováno v:
Journal of the Korean Physical Society. 37:626-628
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6e31558cff27d08090ac2c0add300d
https://doi.org/10.3938/jkps.37.626
https://doi.org/10.3938/jkps.37.626
Transport measurements are carried out on dice Josephson-junction arrays with the frustration index $f=1/3$ and 1/2 which possess, within the limit of the $XY$ model, an accidental degeneracy of the ground states as a consequence of the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01d4b54823ab6a5897bc0d216884e893
http://arxiv.org/abs/0811.4675
http://arxiv.org/abs/0811.4675
Publikováno v:
SPIE Proceedings.
With the development of a CMOS Image Sensor (CIS), the pixel size of a CIS is continuously decreasing. It makes the photo diode smaller and smaller in the unit pixel and, as a result, the sensitivity is reduced at the same time. A micro lens (ML) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c8aada499fc059045074d22ec18bfe
https://doi.org/10.1117/12.772480
https://doi.org/10.1117/12.772480
Autor:
Jeahee Kim, Jin Ho Park, Young-Je Yun, Hakyu Choi, Jaewon Han, Kwangseon Choi, Seung Ryong Park
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
Resist reflow techniques have widely been adopted for lithography in resolution limited region. During the reflow process, resist patterns are heated over its glass temperature through number of temperature steps. Early works have focused how the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::613c7385291a5091ac48bf03493e2568
https://doi.org/10.1117/12.772534
https://doi.org/10.1117/12.772534
Publikováno v:
SPIE Proceedings.
Sub-resolution assistance feature (SRAF) has become one of popular resolution enhancement technique because it is the most easily applicable technique that can be adopted for sub-65 nm node technology. The SRAF can be realized, for example, by locati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51e906b80aa09ba4dc6ccadcb0ce0b7
https://doi.org/10.1117/12.773109
https://doi.org/10.1117/12.773109
Publikováno v:
Optical Microlithography XXI.
We discussed to KrF process extension for 90 nm technology node. The continuous shrinkage of critical dimensions on sub 130 nm devices becomes a key point to improve process margin with pattern resolution problem for lithography. Recently, according
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1247b1b2286138235a1f13618d1ad52b
https://doi.org/10.1117/12.772537
https://doi.org/10.1117/12.772537