Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Young-Ill Kim"'
Autor:
Dong-Hwan Jeon, Si-Nae Park, Jae-Baek Lee, Young-Ill Kim, Kee-Jeong Yang, Jin-Kyu Kang, Dae-Hwan Kim, Shi-Joon Sung, Dae-Kue Hwang
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 1, Pp 100648- (2024)
A fabrication technique using Al2O3-passivated local contacts was employed to produce narrow-bandgap CuInSe2 (CISe) photoabsorbers, which are well-suited as bottom cell materials in tandem devices. However, the performances of CISe cells with narrow
Externí odkaz:
https://doaj.org/article/52ded78605d54ea48cb80bd12f20f333
Autor:
Kee-Jeong Yang, Sammi Kim, Se-Yun Kim, Kwangseok Ahn, Dae-Ho Son, Seung-Hyun Kim, Sang-Ju Lee, Young-Ill Kim, Si-Nae Park, Shi-Joon Sung, Dae-Hwan Kim, Temujin Enkhbat, JunHo Kim, Chan-Wook Jeon, Jin-Kyu Kang
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Flexibility and homogeneity are preferred properties for the kesterite solar modules to compete with silicon counterparts. Here, Yang et al. achieve these properties by designing a thin and multi-layered precursor structure and at the same time incre
Externí odkaz:
https://doaj.org/article/083d18098e014856bf0756572ad5627b
Autor:
Se-Yun Kim, Sanghun Hong, Seung-Hyun Kim, Dae-Ho Son, Young-Ill Kim, Sammi Kim, Young-Woo Heo, Jin-Kyu Kang, Dae-Hwan Kim
Publikováno v:
Nanomaterials, Vol 10, Iss 9, p 1874 (2020)
In this study, a 5-nm thick Al2O3 layer was patterned onto the Mo electrode in the form of a dot to produce a local rear contact, which looked at the effects of this contact structure on Cu2ZnSn(S1-xSex)4 (CZTSSe) growth and solar cell devices. Mo wa
Externí odkaz:
https://doaj.org/article/ecc42d3da56b49ebabd64193e21a36d5
Autor:
Sanghun Hong, Se-Yun Kim, Dae-Ho Son, Seung-Hyun Kim, Young-Ill Kim, Kee-Jeong Yang, Young-Woo Heo, Jin-Kyu Kang, Dae-Hwan Kim
Publikováno v:
Nanomaterials, Vol 10, Iss 1, p 43 (2019)
When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al2O3-pattern
Externí odkaz:
https://doaj.org/article/41587319419141c2a2994d4aaf3279f9
Autor:
Young Ill Kim
Publikováno v:
DONG-A LAW REVIEW. 97:123-157
Autor:
Jiwoo Min, Taiho Park, Sunhee Yun, Jung Yeon Kim, Jongmin Choi, Young-Ill Kim, Seyoung Lim, Jong-Deok Park
Publikováno v:
ACS Applied Materials & Interfaces. 13:6119-6129
CsPbI3 perovskite quantum dots (CsPbI3-PQDs) have recently come into focus as a light-harvesting material that can act as a platform through which to combine the material advantages of both perovskites and QDs. However, the low cubic-phase stability
Autor:
Se-Yun Kim, Seung-Hyun Kim, Dae-Ho Son, Hyesun Yoo, Seongyeon Kim, Sammi Kim, Young-Ill Kim, Si-Nae Park, Dong-Hwan Jeon, Jaebaek Lee, Hyo-Jeong Jo, Shi-Joon Sung, Dae-Kue Hwang, Kee-Jeong Yang, Dae-Hwan Kim, Jin-Kyu Kang
Publikováno v:
ACS applied materialsinterfaces. 14(27)
In this study, we investigated the effect of the stacking order of metal precursors on the formation of volume defects, such as blisters and nanopores, in CZTSSe thin-film solar cells. We fabricated CZTSSe thin films using three types of metal-precur
Autor:
Si-Nae Park, Jun Yong Kim, Young-Ill Kim, Jin-Kyu Kang, Shi-Joon Sung, Dae-Hwan Kim, Yun Seon Do
Publikováno v:
Optical Materials Express. 13:553
Copper indium gallium selenide (Cu(In,Ga)Se2; CIGS) solar cells with small thicknesses active layer have limits to show high efficiency owing to high carrier recombination and low reflection at the electrode/active layer interface. A passivation laye
Autor:
Dae-Hwan Kim, Binrui Xu, Young-Ill Kim, Se-Yun Kim, Ok-Sik Kim, Jin-Kyu Kang, Shin-Won Kang, Dae-Ho Son, Jin-Beom Kwon, Jin-Hyuk Bae, Sae-Wan Kim
Publikováno v:
Journal of Industrial and Engineering Chemistry. 80:122-129
Currently, many researchers are focused on promising new energy technologies such as Cu2ZnSnS4-based solar cells to replace fossil fuel sources. Investigations into a variety of methods have been done to analyze the interfacial problems and improve t
Autor:
Hyesun Yoo, Young Ill Kim, Jin-Kyu Kang, Dae-Hwan Kim, Se-Yun Kim, Kee Jeong Yang, JunHo Kim, Juran Kim, William Jo
Publikováno v:
Journal of Industrial and Engineering Chemistry. 76:437-442
We investigated the characteristics of Cu(In, Ga)Se2 solar cells with bandgap (Eg) grading. Two precursor types were employed: Mo/Cu0.75Ga0.25/In/Ga2Se3 (CIGSe-1) and Mo/Cu/In/Ga2Se3 (CIGSe-2). In CIGSe-1, the range of depths with a high Ga content i