Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Young-Hee Joo"'
Autor:
Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Materials Research Express, Vol 10, Iss 1, p 016401 (2023)
Due to its high dielectric constant ( κ ), the BaTiO _3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film e
Externí odkaz:
https://doaj.org/article/54e6b07317d74be7ba8b66811ac6db40
Publikováno v:
Materials Research Express, Vol 8, Iss 12, p 126402 (2021)
Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the di
Externí odkaz:
https://doaj.org/article/3a3842acb7cf43ac98912cb3f4f0149f
High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma
Publikováno v:
Materials Research Express, Vol 7, Iss 10, p 106301 (2020)
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC
Externí odkaz:
https://doaj.org/article/ff00a24805f54272b5f656e96e4d5dab
Publikováno v:
Plasma Science and Technology.
Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have i
Publikováno v:
Applied Physics A. 128
Publikováno v:
Coatings
Volume 11
Issue 8
Coatings, Vol 11, Iss 906, p 906 (2021)
Volume 11
Issue 8
Coatings, Vol 11, Iss 906, p 906 (2021)
Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance
Publikováno v:
Plasma Science and Technology. 24:075504
Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for
Autor:
Woo-Jung Lee, Doo-Seung Um, Yong-Duck Chung, Chang-Il Kim, Jae-Hyung Wi, Dae-Hyung Cho, Saewon Kang, Young-Hee Joo
Publikováno v:
Coatings
Volume 10
Issue 11
Coatings, Vol 10, Iss 1026, p 1026 (2020)
Volume 10
Issue 11
Coatings, Vol 10, Iss 1026, p 1026 (2020)
Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the w
Publikováno v:
Materials Research Express. 8:126402
Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the di
Publikováno v:
Applied Surface Science. 561:149957
Al-doped ZnO (AZO) has attracted significant attention as a transparent electrode with low cost, high transmittance, high electrical conductivity, and excellent mechanical flexibility. A high-resolution patterning process is required for its applicat