Zobrazeno 1 - 10 of 30 pro vyhledávání: '"Young-Ha Kwon"'
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Akademický článek
Robust Finite-Time Convergence Control Mechanism for High-Precision Tracking in a Hybrid Fluid Power Actuator
Autor: Quoc-Dong Hoang, Vinicio Alejandro Rosas-Cervantes, Soon-Geul Lee, Ihn-Sik Weon, Jae-Hwan Choi, Young-Ha Kwon
Publikováno v: IEEE Access, Vol 8, Pp 196775-196789 (2020)
In this study, a novel multiphase converged control structure with a switching mechanism is established based on the fundamentals of the fast-terminal sliding mode. This control structure achieves an excellent performance in a nonlinear dynamic syste
Externí odkaz: https://doaj.org/article/418e1277f10b4b5a9c986ba0dde3b196
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3
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths
Autor: Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon
Publikováno v: ACS Applied Materials & Interfaces. 14:31010-31023
Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea49ebca5d5d6499aa63a34abeb8d65
https://doi.org/10.1021/acsami.2c07258
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6
Robust Finite-Time Convergence Control Mechanism for High-Precision Tracking in a Hybrid Fluid Power Actuator
Autor: Vinicio Alejandro Rosas-Cervantes, Ihn-Sik Weon, Young-Ha Kwon, Soon-Geul Lee, Quoc-Dong Hoang, Jae-Hwan Choi
Publikováno v: IEEE Access, Vol 8, Pp 196775-196789 (2020)
In this study, a novel multiphase converged control structure with a switching mechanism is established based on the fundamentals of the fast-terminal sliding mode. This control structure achieves an excellent performance in a nonlinear dynamic syste
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac9297fe32f9bcddfe61c6cd66fb0d9a
https://ieeexplore.ieee.org/document/9239929/
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7
Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration
Autor: Hyun-Min Ahn, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Jong-Heon Yang, Yong-Hae Kim, Gyungtae Kim, Sung-Min Yoon
Publikováno v: Nanotechnology. 34:155301
Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20fc9cd9aa1a1e61380acd76274cd787
https://doi.org/10.1088/1361-6528/acb3cc
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9
Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition
Autor: Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon
Publikováno v: Journal of Vacuum Science & Technology B. 40:040602
Thin film transistors (TFTs) using In-Ga-Sn-O (IGTO) active channel layers, which were prepared by atomic-layer deposition (ALD) techniques, were fabricated and characterized with exploring the optimum IGTO channel compositions and the process condit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e5a03115adf9a0a87a941245f533c8c2
https://doi.org/10.1116/6.0001945
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