Výsledky vyhledávání - "Young-Gu Jin"

A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

Publikováno v: IEEE Journal of Solid-State Circuits. 56:3209-3219

A 1.2-Mpixel indirect time-of-flight (ToF) CMOS image sensor is presented to lower peak current and to cancel out multi-user interference. The proposed 4-tap 3.5- $\mu \text{m}$ demodulation pixel is optimally designed to improve quantum efficiency (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39c657c9b6a2983eecc51780c8be0f95
https://doi.org/10.1109/jssc.2021.3112405

Zobrazit plný text záznamu

A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7-$\mu$ m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation

Publikováno v: IEEE Journal of Solid-State Circuits. 55:889-897

A video graphics array (VGA) (640 $\times $ 480) indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7- $\mu \text{m}$ global-shutter pixel in 65-nm back-side illumination (BSI) process. With a 4-tap pixel structure, we achie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa942c58ecb13343877f66a60021eaaa
https://doi.org/10.1109/jssc.2019.2959502

Zobrazit plný text záznamu

A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength

Autor: Min-Sun Keel, Young-Chan Kim, Daeyun Kim, Youngsun Oh, Seung Chul Shin, Myunghan Bae, Sungyoung Seo, Sung-Ho Choi, Sunju Hong, S.L. Cho, Yeomyung Km, Young-Gu Jin, Taeun Hwang, Jung-Chak Ahn, Kyoung-Min Koh, Ho Woo Park, Yong Hun Kwon, Seok-Ha Lee, Yi-tae Kim

Publikováno v: 2020 IEEE International Electron Devices Meeting (IEDM).

A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high q

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83f5add5ab4b5497ee814ef0e56440d6
https://doi.org/10.1109/iedm13553.2020.9371950

Zobrazit plný text záznamu

A 640×480 Indirect Time-of-Flight CMOS Image Sensor with 4-tap 7-μm Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation Scheme

Publikováno v: VLSI Circuits

${A}640 \times 480$ indirect Time-of-Flight (ToF) CMOS image sensor has been designed with 4-tap $7-\mu \mathrm{m}$ global-shutter pixel in 65-nm back-side illumination (BSI) process. With novel 4tap pixel structure, we achieved motion artifact-free

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e82ace25580476c7f724b068b4e7dec5
https://doi.org/10.23919/vlsic.2019.8778090

Zobrazit plný text záznamu

A Time-of-Flight 3-D Image Sensor With Concentric-Photogates Demodulation Pixels

Autor: Ilia Ovsiannikov, Yoon-dong Park, Young-Gu Jin, Seung-Hoon Lee, Tae-Yon Lee, Jung-kyu Jung, Eric R. Fossum, Dong-ki Min, Yong-jei Lee, Wang-Hyun Kim

Publikováno v: IEEE Transactions on Electron Devices. 61:870-877

In this paper, we develop pixels with concentric-photogates for applications in time-of-flight 3-D image sensors with single-tap architecture. The pixel uses a buried-channel device and features a reduced effective electron transit length, for the ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5c58740f6b7360ece977baf26fe7cf7
https://doi.org/10.1109/ted.2014.2301875

Zobrazit plný text záznamu

First-principles study of the compensation mechanism in N-doped ZnO

Autor: Young-Gu Jin, Yong-Sung Kim, Eun-Cheol Lee, Kee-Joo Chang

Publikováno v: Physica B: Condensed Matter. :912-915

Based on first-principles electronic structure calculations for N-related and native point defects in Zinc Oxide (ZnO), we propose a mechanism for the compensation of N acceptors. As compared to a normal N2 source, the use of an active plasma N2 gas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8ac227a672c9da1bcc6d28bcc5f3a13
https://doi.org/10.1016/s0921-4526(01)00838-9

Zobrazit plný text záznamu

Mechanism for the Enhanced Diffusion of Charged Oxygen Ions inSiO2

Autor: Kee-Joo Chang, Young-Gu Jin

Publikováno v: Physical Review Letters. 86:1793-1796

Based on real-space multigrid electronic structure calculations, we find that a double Si-O-Si bridge structure is the lowest energy configuration of interstitial oxygen ions (O(-) and O(2-)) in SiO2, where two additional Si-O bonds are formed with a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::199424cdc645c234c48867860a764511
https://doi.org/10.1103/physrevlett.86.1793

Zobrazit plný text záznamu

Stability and vibrational modes of H2 and H2∗ complexes in Si

Autor: Ji-Wook Jeong, Kee-Joo Chang, Yong-Sung Kim, Young-Gu Jin

Publikováno v: Physica B: Condensed Matter. :231-234

We investigate the stability and local vibrational properties of H2 and H 2 ∗ complexes in Si through first-principles pseudopotential calculations within the local-density-functional approximation (LDA) and the generalized gradient approximation (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17d299e3727cc37a8e5a066ac9526dfe
https://doi.org/10.1016/s0921-4526(99)00460-3

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání