Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Young-Gook Son"'
Publikováno v:
Journal of the Korean Vacuum Society. 17:28-33
Lanthanum modified lead zirconate titanate (Pb1.1La0.08Zr0.65Ti0.35O3) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by r.f magnetron sputtering method. The thin films were deposited at 500°C and annealed at vario
Publikováno v:
Materials Science Forum. 569:137-140
The SBT(SrBi2Ta2O9) thin films with Bi2O3 buffer layer were deposited on Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth due to its volati
Publikováno v:
Journal of the Korean Vacuum Society. 16:267-272
Al-doped ZnO (AZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering. The effects of oxygen flow ratio, which was used for a sputtering gas, on the AZO thin films were investigated by using the X-ray diffraction (XRD),
Publikováno v:
Journal of the Korean Vacuum Society. 16:215-220
Thin films of having structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and , which had 30 nm thickness. To investigate crystallization of self-seed layer we character
Publikováno v:
Materials Science Forum. :1077-1080
Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with Pb1.1Zr0.53Ti0.47O3 and PbO targets. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the
Publikováno v:
Journal of Electroceramics. 17:619-623
PZT thin films and interlayers were fabricated by the radio frequency (r.f.) Magnetron-sputtering from the Pb 1.1 Zr 0.53 Ti 0.47 O 3 , PbO and TiO 2 target. As a result of the XPS depth profile analysis, we can confirm that the substrate temperature
Autor:
Chul Ho Park, Young Gook Son
Publikováno v:
Materials Science Forum. :1130-1133
For lithium secondary microbattery anode, the tin oxide thin films with the various Si additions (0, 2, 6, 10, 20mol%) were prepared on the p-type (100) SiO2/Si substrate by R.F. magnetron sputtering method at the substrate temperature of 300°C unde
Autor:
Young Gook Son, Chul Ho Park
Publikováno v:
Materials Science Forum. :1042-1045
The PZT thin film was deposited by R.F. Magnetron sputtering with Pb 1.1Zr0.53Ti0.47O3 target. When interlayers were inserted at the between PZT and Pt, The grain growth of the PZT thin films was considerably improved by various interlayers (PbO, TiO
Autor:
Young Gook Son, Chul Ho Park
Publikováno v:
Materials Science Forum. :486-489
ZrO2 buffer layer and SrBi2Ta2O9 (SBT) thin films were deposited on the P-type Si(111) substrates by the R.F. magnetron-sputtering method. We studied the effect of the post-annealing of the ZrO2 buffer layer on the MFIS structure. We could conclude t
Autor:
Chul Ho Park, Young Gook Son
Publikováno v:
Materials Science Forum. :1038-1041
Barium strontium titanate (Ba0.66Sr0.34TiO3) thin films and seed-layers were deposited on the Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method. Effects of the substrate temperature on electrical properties of BST thin films were studied. T