Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Young-Churl Bang"'
Publikováno v:
Applied Physics Letters. 78:2858-2860
An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data
Autor:
Yun-Kyung Oh, Eun-Hwa Lee, Young-Churl Bang, Jung-Kee Lee, Yu-Dong Bae, Young-Hyun Kim, In Kim, Dong-Hoon Jang
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
By optimum design of spot-size converter regarding the cavity length, active volume and taper type, we achieved SSC LD with 13degtimes14deg FFP, 3.5 dB coupling loss and 3 dB bandwidth over 4 GHz applicable to uncooled E-PON FTTH modules
Autor:
S.L. Hwang, Young-Churl Bang, D.H. Jang, Joongkoo Kang, S.S. Park, Yong-Chan Keh, Jung-Sub Lee, Young-Hyun Kim, Dae-Yup Shin, Youngsun Oh, Eun-Ok Lee, J.S. Lee
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
Uncooled ASE-injected WBG-LDs in the S-band are first developed as downstream sources in WDM-PONs. The single WBG-LD covers 100 GHz-spaced 32 channels and allows BERs of 10-10 with +2 dBm launching power over 25 km
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
AlGaInAs selective area growth on a masked InP substrate has been investigated to develop a spot-size converter integrated laser diode. After migration blocking area was applied to suppress surface migration effect, selective grown AlGaInAs layer sho
Autor:
Tongsung Kim, Eun-Ok Lee, H.S. Kim, Jung-Sub Lee, Dae-Yup Shin, Youngsun Oh, Lee Juyeong, Young-Churl Bang, Jung-Geun Kim
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-hand wavelength channels with temperature range from -30 to 80 /spl deg/C in 155 Mb/s upstream transmissions over 25 km of single mode fib
Autor:
Ahn Goo Choo, Taeil Kim, Eun-Hwa Lee, Young Churl Bang, Hyeon-Soo Kim, Jung-Kee Lee, Do Young Rhee, Joon Sang Yu
Publikováno v:
International Conference onIndium Phosphide and Related Materials, 2003..
We developed dry etching for the fabrication of DFB lasers. Most of all, effects of dry etching conditions such as rf power and etch mask materials on the etching properties and overgrown active layers were investigated. Device characteristics and lo
Autor:
Tae Jin Kim, Ahn Goo Choo, Jung-Kee Lee, Hyeon-Soo Kim, Joon Sang Yu, Dong-Soo Bang, Young Churl Bang, Taeil Kim
Publikováno v:
International Conference onIndium Phosphide and Related Materials, 2003..
In this work, we developed new plasma etching for mesa formation of buried heterostructure lasers. The uniform characteristics and long-term reliability of device were obtained using optimized dry etching and additional wet etching. These optimum dev
Autor:
Young Hyun Kim, Yu-Dong Bae, Eun-Hwa Lee, In Kim, Young-Churl Bang, JungKee Lee, Yunkyung Oh, Dong-Hoon Jang
Publikováno v:
International Conference on Indium Phosphide & Related Materials, 2005; 2005, p543-546, 4p
Autor:
Hyeon Soo Kim, Eun-Hwa Lee, Do Young Rhee, Young Churl Bang, Joon Sang Yu, Jung Kee Lee, Ahn Goo Choo, Tae Il Kim
Publikováno v:
International Conference on Indium Phosphide & Related Materials, 2003; 2003, p480-483, 4p
Autor:
Hyeon Soo Kim, Jung Kee Lee, Young Churl Bang, Tae Jin Kim, Joon Sang Yu, Dong-Soo Bang, Ahn Goo Choo, Tae Il Kim
Publikováno v:
International Conference on Indium Phosphide & Related Materials, 2003; 2003, p186-189, 4p