Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Young Sir Chung"'
Autor:
Young Sir Chung, Bob Baird
Publikováno v:
Microelectronics Reliability. 42:211-218
With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09b0a1dd429039691708bfd047f9b34
https://doi.org/10.1016/s0026-2714(01)00252-9
https://doi.org/10.1016/s0026-2714(01)00252-9
Publikováno v:
Applied Surface Science. 125:65-72
The work function changes of thin gold films upon exposure to phosphine and arsine in the concentration range 20–80 parts per billion (ppb) concentrations were studied using the Kelvin probe method under ambient conditions. The work function of gol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0205078379f86843f36e88f07212dfd
https://doi.org/10.1016/s0169-4332(97)00243-2
https://doi.org/10.1016/s0169-4332(97)00243-2
Publikováno v:
The Journal of Chemical Physics. 98:8859-8869
All‐electron complete active space self‐consistent field (CASSCF) followed by full second‐order configuration interaction (SOCI) calculations which included up to 1.7 million configurations have been made on several electronic states of PHn and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3672f5fe603f1d6d76c3dbf0d2ed95d5
https://doi.org/10.1063/1.464443
https://doi.org/10.1063/1.464443
Autor:
Young Sir Chung
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
A major challenge in the semiconductor power device technology with continuing shrink in feature sizes and its circuit implementation is power density and heat build-up related problems. This paper discusses a significance of vertical power dissipati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705ea3942226c210e503b6e8d5c72b45
https://doi.org/10.1109/ispsd.2007.4294977
https://doi.org/10.1109/ispsd.2007.4294977
Autor:
Bradley N. Engel, Gregory W. Grynkewich, J.M. Slaughter, Mark A. Durlam, P. Shah, Mark F. Deherrera, Bich-Yen Nguyen, J. Salter, B. Martino, Young Sir Chung
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. MRAM is a uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcfdbbc0d656eda6b60b4f3aa0ff40f6
https://doi.org/10.1109/icicdt.2007.4299546
https://doi.org/10.1109/icicdt.2007.4299546
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
LDMOS transistors are widely used as output drivers in multiple applications in smart power IC designs. Relative to their sizes, LDMOS transistors are inherently weak with respect to ESD reliability and enhancing their ESD robustness has been an on-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263574bd4c26002c1e7f5c0b09b3eca3
https://doi.org/10.1109/relphy.2006.251242
https://doi.org/10.1109/relphy.2006.251242
Autor:
Young Sir Chung, Pon Sung Ku
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Reliability of AlOx magnetic tunnel junction (MTJ) devices is studied by investigating resistance drift behaviors under various stress conditions. Both reversible and permanent traps processes are observed during stress. Under unipolar pulsed stress,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4d84003f435eae23c30878e9426385
https://doi.org/10.1109/relphy.2006.251258
https://doi.org/10.1109/relphy.2006.251258
Publikováno v:
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
Lateral DMOS (LDMOS) power transistors of SMART technologies are widely used as output drivers in multiple applications. However, LDMOS devices are generally not robust under ESD due to deep snapback causing localized current crowding and leading to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8288e4edf0f39ea5aaefbd080be230c8
https://doi.org/10.1109/ispsd.2005.1488023
https://doi.org/10.1109/ispsd.2005.1488023
Autor:
Nicolas Nolhier, Young Sir Chung, Marise Bafleur, Patrice Besse, Michel Zecri, B. Baird, R. Ida
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
Energy capability and electrostatic discharge characteristics of an LDMOS device exhibit a strong dependence on both active area and geometry of the device. It results from coupling processes between electrical and thermal entities within various com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af0cb891ccd0e2e4e11ab584e86773b
https://doi.org/10.1109/ispsd.2003.1225279
https://doi.org/10.1109/ispsd.2003.1225279
Publikováno v:
Journal of Materials Science. 23:3958-3962
A model has been proposed for the formation of the ferroelectric solid-liquid interface in the non-electrolyte dispersion system. Bulk properties as well as the surface properties of the dispersing solid could be a factor which was associated with va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef59b4e741c9576d335fc116e1474185
https://doi.org/10.1007/bf01106820
https://doi.org/10.1007/bf01106820