Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Young Gyu You"'
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Akademický článek
Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors
Autor: Dong-Ho Shin, Young Gyu You, Sung Il Jo, Goo-Hwan Jeong, Eleanor E. B. Campbell, Hyun-Jong Chung, Sung Ho Jhang
Publikováno v: Nanomaterials, Vol 12, Iss 21, p 3820 (2022)
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT
Externí odkaz: https://doaj.org/article/9f49600baf1b4955922e63b88a3dbf86
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3
Suspended MoTe2 field effect transistors with ionic liquid gate
Autor: Eleanor E. B. Campbell, Sung Ho Jhang, Woo-Sung Choi, J. H. Hong, Young Gyu You
Publikováno v: Choi, W R, Hong, J H, You, Y G, Campbell, E E B & Jhang, S H 2021, ' Suspended MoTe 2 field effect transistors with ionic liquid gate ', Applied Physics Letters, vol. 119, no. 22, 223105 . https://doi.org/10.1063/5.0065568
The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allow
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8094fe81f2e0f606220daa3094ad6c9e
https://doi.org/10.1063/5.0065568
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4
Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors
Autor: Hyun-Jong Chung, Eleanor E. B. Campbell, Dong Ho Shin, Young Gyu You, Sung Ho Jhang, Jong Hwa Ryu
Publikováno v: You, Y G, Shin, D H, Ryu, J H, Campbell, E E B, Chung, H & Jhang, S H 2021, ' Atomic layer deposited Al 2 O 3 passivation layer for few-layer WS 2 field effect transistors ', Nanotechnology, vol. 32, no. 50, pp. 505702 . https://doi.org/10.1088/1361-6528/ac2390
We have investigated the effect of an Al2O3passivation layer on the performance of few-layer WS2FETs. While the performance of WS2FETs is often limited by a substantial decrease in carrier mobility owing to charged impurities and a Schottky barrier b
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb2c8994b81c7946b4f49c6d0b82a75f
https://doi.org/10.1088/1361-6528/ac2390
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5
Role of remote interfacial phonons in the resistivity of graphene
Autor: Sung Ho Jhang, Yongkyung Kwon, Young Gyu You, Jeonghwan Ahn, Eleanor E. B. Campbell, Bae Ho Park
Publikováno v: You, Y G, Ahn, J H, Park, B-H, Kwon, Y, Campbell, E E B & Jhang, S-H 2019, ' Role of remote interfacial phonons in the resistivity of graphene ', Applied Physics Letters, vol. 115, 043104 . https://doi.org/10.1063/1.5097043
The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f5761355215fcc3f107a2d67a5ef7cc
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7
Chemical Vapor-Deposited Vanadium Pentoxide Nanosheets with Highly Stable and Low Switching Voltages for Effective Selector Devices
Autor: Jinsu Kim, Sung Ho Jhang, Seung-Hyun Chun, Young Gyu You, Jae Ho Jeon, Sunae Seo, Seonyeong Kim, Minho Song, Sunghun Lee
Publikováno v: ACS applied materialsinterfaces. 10(49)
Recently, attempts to overcome the physical limits of memory devices have led to the development of promising materials and architectures for next-generation memory technology. The selector device is one of the essential ingredients of high-density s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56a549ae9461917cfb87d869e3f6f0ea
https://pubmed.ncbi.nlm.nih.gov/30427172
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8
Hall effect in carbon nanotube thin films
Autor: Yung Woo Park, Sung Won Kim, Urszula Dettlaff-Weglikowska, Sung Ho Jhang, Young Gyu You, Tae Woo Uhm, Seung Hyun Lee
Publikováno v: Synthetic Metals. 198:84-87
We have investigated Hall coefficient and magnetoresistance in thin films of single-walled carbon nanotubes, prepared in four different ways. Hall voltages are linear for all samples in magnetic fields up to 6 T, and the measured carrier density lies
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5daa784f931603096f10bcd0794bb433
https://doi.org/10.1016/j.synthmet.2014.10.001
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9
Cs encapsulation and interacting noise sources in carbon nanotubes
Autor: Sung Ho Jhang, Goo-Hwan Jeong, Tae Woo Uhm, Sung Won Kim, Young Gyu You, Yung Woo Park
Publikováno v: Synthetic Metals. 197:48-51
We study the effect of Cs encapsulation on the transport and noise properties of carbon nanotubes, and report very large two-level current fluctuations observed in the time-traces of the current at low temperatures. When several two-level fluctuation
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77a88ca5769031ee4d2ade7520f05712
https://doi.org/10.1016/j.synthmet.2014.08.011
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10
Fullerene peapods: In-situ conductivity study during synthesis
Autor: Young Gyu You, Sung Ho Jhang, Yung Woo Park, Tae Woo Uhm, Sung Won Kim
Publikováno v: Journal of the Korean Physical Society. 64:1774-1777
We report in-situ measurement of the conductivity during the synthesis of C60-filled single-walled carbon nanotubes (SWNTs), so-called fullerene peapods. The synthesis was performed in a sealed quartz tube at 773 K by using the sublimation of C60 int
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2295b631f85a5130a8b1f6f92850a0fb
https://doi.org/10.3938/jkps.64.1774
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