Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Young Bum Koh"'
Publikováno v:
Proceedings of SPIE; 2/18/2017, Vol. 10273, p11-29, 19p
Autor:
In Seon Park, Sang-In Lee, Young Bum Koh, Cha Young Yoo, Sang-min Lee, Sejun Oh, Moon Yong Lee, Byueng Hee Kim
Publikováno v:
Integrated Ferroelectrics. 20:225-239
Degradation of ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt capacitor by the back-end process of ferroelectric random access memory (FRAM) device fabrication process was studied, particularly by the interlayer dielectric (ILD). The influence of ILD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8ae07b8c8ed1a52a7d51bac01e44d3
https://doi.org/10.1080/10584589808238783
https://doi.org/10.1080/10584589808238783
Autor:
Seungbum Hong, Sang-Gyun Woo, Kwangsoo No, Zhong-Tao Jiang, Eunah Kim, Young-Bum Koh, Byeong-Soo Bae, Sung-Chul Lim
Publikováno v:
Materials Science and Engineering: B. 45:98-101
Chromium oxide films were deposited using DC reactive magnetron sputtering system with different gas ring positions. It was found that the film quality was improved, while film thickness deviation over 2′' area of silica wafer increased, as the dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3a782935b6cb864dd8544b2f9255f7
https://doi.org/10.1016/s0921-5107(96)01913-7
https://doi.org/10.1016/s0921-5107(96)01913-7
Autor:
Moon Yong Lee, Myoung Bum Lee, Jung-min Ha, Young Bum Koh, U. In Chung, Sang-In Lee, Young Wook Park, Byung Lyul Park, Hyeon Deok Lee, Young-sun Kim, Dae Hong Ko
Publikováno v:
Journal of Electronic Materials. 26:L1-L5
We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7388d1ef2d8d2d0a25c0a0237a9a560
https://doi.org/10.1007/s11664-997-0096-6
https://doi.org/10.1007/s11664-997-0096-6
Autor:
Byeong-Soo Bae, Sung-Chul Lim, Zhong-Tao Jiang, Eunah Kim, Seungbum Hong, Chang Kwon Hwangbo, Sang-Gyun Woo, Kwangsoo No, Young-Bum Koh
Publikováno v:
Semiconductor Science and Technology. 11:1450-1455
An optical simulation for a single-layer halftone phaseshifting mask (SLHTPSM) has been established and verified by the experimental data from several different sources. This simulation is suitable for a wide lithography exposure wavelength; for exam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::429466e281d2e309f444d415d635d16a
https://doi.org/10.1088/0268-1242/11/10/016
https://doi.org/10.1088/0268-1242/11/10/016
Autor:
Byeong-Soo Bae, Kwangsoo No, Seungbum Hong, Sang-Gyun Woo, Eunah Kim, Sung-Chul Lim, Young-Bum Koh
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2721-2727
The thickness profile of the film deposited by planar circular‐type magnetron is simulated considering the relationship between magnetic field profile and target erosion rate. The model is confirmed by the measurement of the film thickness profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beccc0686da52643a1e1cec6c8b35a70
https://doi.org/10.1116/1.580193
https://doi.org/10.1116/1.580193
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1128-1131
The properties of spin-on glass (SOG) film modified by 100 keV Ga+, Ar+, N+ and He+ ion beam irradiation were investigated by Fourier transform infrared absorption spectroscopy and X-ray photoelectron spectroscopy. SOG becomes insoluble to methanol b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2838a0e082f71c6bbc90c4802947059e
https://doi.org/10.1016/0168-583x(93)90751-q
https://doi.org/10.1016/0168-583x(93)90751-q
Autor:
Seungbum Hong, Young-Bum Koh, Kyong-Sub Kim, Sang-Gyun Woo, Eunah Kim, Zhong-Tao Jiang, Dae Weon Kim, Sung-Chul Lim, Kwangsoo No
Publikováno v:
Applied optics. 36(28)
To acquire the required resolution for 248- and 193-nm lithography, a study of attenuated phase-shifting mask (Att-PSM) technology is in progress. We performed a simulation study using a matrix method to calculate relative transmittance and the amoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfb1a801a7d84b222e3fad44d5ec869f
https://pubmed.ncbi.nlm.nih.gov/18264234
https://pubmed.ncbi.nlm.nih.gov/18264234
Autor:
Young-Bum Koh
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
Semiconductor is being evolved as a driving force in creating new electronic devices (e.g. Flash-type MP3 player, portable game console, tablet PC, etc.), even determining product release schedule while it has been considered only as a component of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec78af5d80a4b7dc8df1059efd1d2e4b
https://doi.org/10.1109/issm.2006.4493005
https://doi.org/10.1109/issm.2006.4493005
Autor:
Han Sin Lee, H. K. Kang, Moon Han Park, Tai-su Park, Moon Yong Lee, Sang Dong Kwon, Young Bum Koh, Yu Gyun Shin
Publikováno v:
International Electron Devices Meeting. Technical Digest.
In order to develop a Shallow Trench Isolation (STI) which does not have trench corner induced degradation of the gate oxide, its integrities were evaluated with rounded, non-rounded top corner, and an addition of CVD SiO/sub 2/ spacer. In the experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27f8270420fdd508b4f7c8f31093c2c5
https://doi.org/10.1109/iedm.1996.554088
https://doi.org/10.1109/iedm.1996.554088