Zobrazeno 1 - 10
of 7 595
pro vyhledávání: '"Young, Ian A"'
Autor:
Kumarasubramanian, Harish, Ravindran, Prasanna Venkat, Liu, Ting-Ran, Song, Taeyoung, Surendran, Mythili, Chen, Huandong, Buragohain, Pratyush, Tung, I-Cheng, Gupta, Arnab Sen, Steinhardt, Rachel, Young, Ian A., Shao, Yu-Tsun, Khan, Asif Islam, Ravichandran, Jayakanth
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often bee
Externí odkaz:
http://arxiv.org/abs/2407.13953
Autor:
Arango, Isabel C., Choi, Won Young, Pham, Van Tuong, Groen, Inge, Vaz, Diogo C., Debashis, Punyashloka, Li, Hai, DC, Mahendra, Oguz, Kaan, Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix
Publikováno v:
Physical Review B 108, 104425 (2023)
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputt
Externí odkaz:
http://arxiv.org/abs/2311.03598
Autor:
Gallego, Fernando, Trier, Felix, Mallik, Srijani, Bréhin, Julien, Varotto, Sara, Vicente-Arche, Luis Moreno, Gosavy, Tanay, Lin, Chia-Ching, Coudevylle, Jean-René, Iglesias, Lucía, Casanova, Félix, Young, Ian, Vila, Laurent, Attané, Jean-Philippe, Bibes, Manuel
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conver
Externí odkaz:
http://arxiv.org/abs/2309.13992
Autor:
Fedorova, Natalya S., Nikonov, Dmitri E., Mangeri, John M., Li, Hai, Young, Ian A., Íñiguez, Jorge
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic
Externí odkaz:
http://arxiv.org/abs/2307.14789
Autor:
Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still ord
Externí odkaz:
http://arxiv.org/abs/2302.12162
Autor:
Young, Ian1 (AUTHOR) iyoung@torontomu.ca, Desta, Binyam N.1 (AUTHOR), Sanchez, J. Johanna1 (AUTHOR), Majowicz, Shannon E.2 (AUTHOR), Edge, Thomas A.3 (AUTHOR), Elton, Sarah4 (AUTHOR), Pearl, David L.5 (AUTHOR), Brooks, Teresa6 (AUTHOR), Nesbitt, Andrea7 (AUTHOR), Patel, Mahesh8 (AUTHOR), Schwandt, Michael9 (AUTHOR), Lyng, Dylan10 (AUTHOR), Krupa, Brandon11 (AUTHOR), Schellhorn, Herb E.3 (AUTHOR), Montgomery, Elizabeth12 (AUTHOR), Tustin, Jordan1 (AUTHOR)
Publikováno v:
BMC Public Health. 9/13/2024, Vol. 24 Issue 1, p1-9. 9p.
Autor:
Choi, Won Young, Arango, Isabel C., Pham, Van Tuong, Vaz, Diogo C., Yang, Haozhe, Groen, Inge, Lin, Chia-Ching, Kabir, Emily S., Oguz, Kaan, Debashis, Punyashloka, Plombon, John J., Li, Hai, Nikonov, Dmitri E., Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix
Publikováno v:
Nano Lett. 22, 7992-7999 (2022)
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermi
Externí odkaz:
http://arxiv.org/abs/2210.09792
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long s
Externí odkaz:
http://arxiv.org/abs/2206.09998
In this work we introduce the simplest, lowest-order Landau-like potential for BiFeO$_3$ and La-doped BiFeO$_3$ as an expansion around the paraelectric cubic phase in powers of polarization, FeO$_6$ octahedral rotations and strains. We present an ana
Externí odkaz:
http://arxiv.org/abs/2203.16677
Autor:
Parsonnet, Eric, Caretta, Lucas, Nagarajan, Vikram, Zhang, Hongrui, Taghinejad, Hossein, Behera, Piush, Huang, Xiaoxi, Kavle, Pravin, Fernandez, Abel, Nikonov, Dmitri, Li, Hai, Young, Ian, Analytis, James, Ramesh, Ramamoorthy
Publikováno v:
Phys. Rev. Lett. 129, 087601 (2022)
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong m
Externí odkaz:
http://arxiv.org/abs/2203.16519