Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Youn Gyoung Chang"'
Autor:
Youn-Gyoung Chang, Hanseok Lee, Youngjin Yi, JungJune Kim, Jihwan Jung, Soyang Choi, Kwon-Shik Park, JeomJae Kim
Publikováno v:
Proceedings of the International Display Workshops. :181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::394e719752eb82f6ff8809ea6346b9d3
https://doi.org/10.36463/idw.2021.0181
https://doi.org/10.36463/idw.2021.0181
Autor:
Myeong Ho Kim, Youn Gyoung Chang, Kwon Shik Park, Jun Sun Lee, Jong Un Kim, Dong Gyu Kim, Duck Kyun Choi
Publikováno v:
RSC advances. 9(36)
We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (VTH) shift of −6.2 V after 100 Gy X-ray irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6de613a214745b267e67fc847dbd3c4
https://pubmed.ncbi.nlm.nih.gov/35515555
https://pubmed.ncbi.nlm.nih.gov/35515555
Publikováno v:
Applied Physics Letters. 116:013502
We studied hydrogen (H) behavior in amorphous In-Ga-Zn-O (a-IGZO) films under X-ray irradiation by evaluating the threshold voltage (VTH) shift in a-IGZO thin film transistors (TFTs) with different H concentrations in the active layers. We fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf029c6b43a881acd9d6270dc1eeee6
https://doi.org/10.1063/1.5132372
https://doi.org/10.1063/1.5132372
Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depend
Publikováno v:
IEEE Electron Device Letters. 33:1015-1017
We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66b4622d4e41ff6dc62c68a2bfa58ed
https://doi.org/10.1109/led.2012.2195632
https://doi.org/10.1109/led.2012.2195632
Autor:
Kwon-Shik Park, Dae-Hwan Kim, Youn-Gyoung Chang, Taewoong Moon, Chang-Dong Kim, Jae Hoon Kim, Seongil Im, Hee Sung Lee
Publikováno v:
IEEE Electron Device Letters. 32:1704-1706
We report that a pulsed negative bias stress slightly deteriorates the photoelectric stability of amorphous InGaZnO thin-film transistors, whereas a dc negative bias stress induces a large threshold voltage shift under the light. In the case of pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e6aae3d9a4695ee90809ace5d07b66
https://doi.org/10.1109/led.2011.2167736
https://doi.org/10.1109/led.2011.2167736
Publikováno v:
IEEE Electron Device Letters. 32:336-338
Trap density of states (DOS) for two amorphous InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88b7f92ccb8335d1e77ed03d022b5746
https://doi.org/10.1109/led.2010.2102739
https://doi.org/10.1109/led.2010.2102739
Autor:
Jae Hoon Kim, Syed Raza Ali Raza, Youn Gyoung Chang, Pyo Jin Jeon, Young Tack Lee, Heon Jin Choi, Seongil Im, Ryong Ha
Publikováno v:
Physical chemistry chemical physics : PCCP. 15(8)
We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ff2f9e5b3d44e1c7f3a445b39e28eba
https://pubmed.ncbi.nlm.nih.gov/23340850
https://pubmed.ncbi.nlm.nih.gov/23340850
Publikováno v:
SpringerBriefs in Physics ISBN: 9789400763913
Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::960887b2236bf3da82be649d1a9edcea
https://doi.org/10.1007/978-94-007-6392-0_5
https://doi.org/10.1007/978-94-007-6392-0_5
Publikováno v:
SpringerBriefs in Physics ISBN: 9789400763913
Photo-Excited Charge Collection Spectroscopy
Photo-Excited Charge Collection Spectroscopy
Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ee814b3c18c20c0a6b4cc6bc99a4727
https://doi.org/10.1007/978-94-007-6392-0
https://doi.org/10.1007/978-94-007-6392-0