Výsledky vyhledávání - "Youhei Sugimoto"

Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2Solution and Hf Metal Hard Mask

Autor: Keisuke Yamamoto, Hiroshi Nakashima, Youhei Sugimoto

Publikováno v: Japanese Journal of Applied Physics. 46:L211-L214

We fabricated TaN gate electrodes on SiO2 film by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 interfacial layer. Hf metal was used as a hard mask for the wet etching of the TaN film.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e4fe85586c2cab77a26f9ed19ba3c4c
https://doi.org/10.1143/jjap.46.l211

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In-Situ Heating Observation for Formation Behavior of Polycrystalline Silicon Thin Films Fabricated Using Aluminum Induced Crystallization

Autor: Takeshi Hirota, Hideharu Nakashima, Naoki Takata, Seiichiro, Youhei Sugimoto, Kensuke Fujimoto, Hiroshi Nakashima, Ken Ichi Ikeda

Publikováno v: Journal of the Japan Institute of Metals. 71:158-163

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::758d78763694698b93bc3ec5d747b1bd
https://doi.org/10.2320/jinstmet.71.158

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Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

Autor: Keisuke Yamamoto, Hiroshi Nakashima, Youhei Sugimoto, Hideto Adachi, Dong Wang, Hideharu Nakashima

Publikováno v: Materials Science in Semiconductor Processing. 9:1031-1036

High permittivity (high-k) gate dielectrics were fabricated using the plasma oxidation of Hf metal/SiO2/Si followed by the post-deposition annealing (PDA), which induced a solid-phase reaction between HfOx and SiO2. The oxidation time and PDA tempera

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a51ac2524614fc7f331065e740366cf
https://doi.org/10.1016/j.mssp.2006.10.020

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Thermal analysis of the double-melting behavior of poly(L-lactic acid)

Autor: Shinsuke Tsubakihara, Munehisa Yasuniwa, Youhei Sugimoto, Chitoshi Nakafuku

Publikováno v: Journal of Polymer Science Part B: Polymer Physics. 42:25-32

The melting and crystallization behavior of poly(L-lactic acid) (PLLA; weight-average molecular weight = 3 × 105) was studied with differential scanning calorimetry (DSC). DSC curves for PLLA samples were obtained at various cooling rates (CRs) from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6a0fbff5186ca06eb630f8598d004b3
https://doi.org/10.1002/polb.10674

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Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Autor: Keisuke Yamamoto, Yuusaku Suehiro, Dong Wang, Youhei Sugimoto, Masanari Kajiwara, Hiroshi Nakashima

Publikováno v: Thin Solid Films. 517:204-206

We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb0f8c0405c948bbcf95e47dcaf7c441
https://doi.org/10.1016/j.tsf.2008.08.058

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Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation

Autor: Dong Wang, Hideharu Nakashima, Nam Hoai Luu, Youhei Sugimoto, Liwei Zhao, Ken Ichi Ikeda, Hiroshi Nakashima

Publikováno v: Japanese Journal of Applied Physics. 43:L47-L49

An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e41693579de459dfb52cb0a24e6397c2
https://doi.org/10.1143/jjap.43.l47

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Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma

Autor: Junli Wang, Dong Wang, Hiroshi Nakashima, Youhei Sugimoto, Liwei Zhao, Taishi Saitou

Publikováno v: Scopus-Elsevier

Polycrystalline-Si thin film was successfully deposited on a SiO2 layer by using a sputtering-type electron cyclotron resonance plasma at the low substrate temperature of 400°C. The effects of ion (Ar, Kr, and Xe) mass and radius on the crystallizat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f2da4e18f72cb387075a2608a20d4e5
https://doi.org/10.1143/jjap.42.l511

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Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure

Autor: Dong Wang, Keisuke Yamamoto, Kana Hirayama, Masanari Kajiwara, Youhei Sugimoto, Hiroshi Nakashima, Yuusaku Suehiro

Publikováno v: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

High-permittivity (high-k) dielectrics with HfO2/HfxSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidiz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6e632ac0077696cad4a4d4c67d78fc0
https://doi.org/10.1109/icsict.2008.4734660

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