Výsledky vyhledávání

Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors

Autor: Yanan Ding, Guoxia Liu, Zhen Wang, Youchao Cui, Chao Wang, Fukai Shan, Zhijie Xin

Publikováno v: IEEE Electron Device Letters. 41:413-416

In this letter, the water-induced (WI) In2O3 nanofibers were prepared by electrospinning using poly(vinyl alcohol) as polymer. The field effect transistors (FETs) based on In2O3 nanofibers were integrated, and the annealing dependence of the FETs per

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::712c8eb252e0f705d1fb9d24bb1fc4c5
https://doi.org/10.1109/led.2020.2964318

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Fast electrochromic switching of electrospun Cu-doped NiO nanofibers

Autor: Youchao Cui, Yuanyue Li, Zhao Yao, Guoxia Liu, Fukai Shan

Publikováno v: Scripta Materialia. 178:472-476

In this report, one-dimensional Cu-doped NiO nanofibers were synthesized by electrospinning and their electrochromic (EC) performance was investigated. It is demonstrated that the Ni0.97Cu0.03O nanofibers exhibit particularly fast switching speed (1.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6b8120282c9eb1d0d1916b4beb09433
https://doi.org/10.1016/j.scriptamat.2019.12.035

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Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

Autor: Yanan Ding, Guoxia Liu, Youchao Cui, You Meng, Zhao Yao, Chuanyu Fu, Fukai Shan

Publikováno v: IEEE Electron Device Letters. 41:62-65

Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3d8499ed5b44963c35c3652398aaedb
https://doi.org/10.1109/led.2019.2953314

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Low-voltage and high-performance field-effect transistors based on ZnxSn1−xO nanofibers with a ZrOx dielectric

Autor: Caixuan Fan, Zhen Wang, You Meng, Fukai Shan, Guoxia Liu, Youchao Cui, Dejun Feng, Byoungchul Shin

Publikováno v: Nanoscale. 10:14712-14718

One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cebf67db6d121473a90033ff66baa7e
https://doi.org/10.1039/c8nr03887b

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Welded silver nanowire networks as high-performance transparent conductive electrodes: Welding techniques and device applications

Autor: Guoxia Liu, Xuhai Liu, Youchao Cui, Yanan Ding, Fukai Shan

Publikováno v: Applied Materials Today. 20:100634

Owing to the combined advantages of superior optical transmittance and excellent flexibility, low-cost silver nanowire networks (Ag-NNs) are considered as the promising candidates to replace brittle and cost-ineffective indium tin oxide (ITO) transpa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46faf460ef5d088d16417dd8e0fd5dc9
https://doi.org/10.1016/j.apmt.2020.100634

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Low-voltage and high-performance field-effect transistors based on Zn

Autor: Zhen, Wang, You, Meng, Youchao, Cui, Caixuan, Fan, Guoxia, Liu, Byoungchul, Shin, Dejun, Feng, Fukai, Shan

Publikováno v: Nanoscale. 10(30)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::b418fac8edd70145c25fce8cbff9bf24
https://pubmed.ncbi.nlm.nih.gov/30043022

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High performance electronic devices based on nanofibers via a crosslinking welding process

Autor: Elvira Fortunato, Zhen Wang, Guoxia Liu, You Meng, Chunfeng Wang, Youchao Cui, Rodrigo Martins, Fukai Shan

Publikováno v: Nanoscale

Recently, metal oxide nanofibers fabricated by electrospinning have been considered as promising components for next-generation electronic devices. Unfortunately, the nanofiber-based electronic devices usually exhibited inferior electrical performanc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cac9a77dedd8a7e742332e8481090da

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The role of oxygen in determining the electrical performance of ZnSnO nanofiber field-effect transistors

Autor: Fukai Shan, Zhen Wang, Youchao Cui, Guoxia Liu, Byoung-Chul Shin, Chao Wang, Zhijie Xin, Chunfeng Wang

Publikováno v: Journal of Physics D: Applied Physics. 53:015109

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::500d5eae28dc1fe9f487e37d9bb8e082
https://doi.org/10.1088/1361-6463/ab47b2

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Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

Autor: You Meng, Guoxia Liu, Zhuodong Li, Byoungchul Shin, Fukai Shan, Zhao Yao, Youchao Cui, Chao Wang

Publikováno v: Journal of Physics D: Applied Physics. 52:225102

Recently, indium oxide (In2O3) semiconducting nanowires (NWs) have been extensively explored as building blocks for numerous electronic applications. However, most of the field-effect transistors (FETs) based on In2O3 NWs were operated in depletion m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ba80b348fc600ad1438d2d06be40a2a
https://doi.org/10.1088/1361-6463/ab0de2

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