Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Youchao Cui"'
Publikováno v:
IEEE Electron Device Letters. 41:413-416
In this letter, the water-induced (WI) In2O3 nanofibers were prepared by electrospinning using poly(vinyl alcohol) as polymer. The field effect transistors (FETs) based on In2O3 nanofibers were integrated, and the annealing dependence of the FETs per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712c8eb252e0f705d1fb9d24bb1fc4c5
https://doi.org/10.1109/led.2020.2964318
https://doi.org/10.1109/led.2020.2964318
Publikováno v:
Scripta Materialia. 178:472-476
In this report, one-dimensional Cu-doped NiO nanofibers were synthesized by electrospinning and their electrochromic (EC) performance was investigated. It is demonstrated that the Ni0.97Cu0.03O nanofibers exhibit particularly fast switching speed (1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b8120282c9eb1d0d1916b4beb09433
https://doi.org/10.1016/j.scriptamat.2019.12.035
https://doi.org/10.1016/j.scriptamat.2019.12.035
Publikováno v:
IEEE Electron Device Letters. 41:62-65
Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d8499ed5b44963c35c3652398aaedb
https://doi.org/10.1109/led.2019.2953314
https://doi.org/10.1109/led.2019.2953314
Autor:
Caixuan Fan, Zhen Wang, You Meng, Fukai Shan, Guoxia Liu, Youchao Cui, Dejun Feng, Byoungchul Shin
Publikováno v:
Nanoscale. 10:14712-14718
One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cebf67db6d121473a90033ff66baa7e
https://doi.org/10.1039/c8nr03887b
https://doi.org/10.1039/c8nr03887b
Publikováno v:
Applied Materials Today. 20:100634
Owing to the combined advantages of superior optical transmittance and excellent flexibility, low-cost silver nanowire networks (Ag-NNs) are considered as the promising candidates to replace brittle and cost-ineffective indium tin oxide (ITO) transpa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46faf460ef5d088d16417dd8e0fd5dc9
https://doi.org/10.1016/j.apmt.2020.100634
https://doi.org/10.1016/j.apmt.2020.100634
Autor:
Zhen, Wang, You, Meng, Youchao, Cui, Caixuan, Fan, Guoxia, Liu, Byoungchul, Shin, Dejun, Feng, Fukai, Shan
Publikováno v:
Nanoscale. 10(30)
One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b418fac8edd70145c25fce8cbff9bf24
https://pubmed.ncbi.nlm.nih.gov/30043022
https://pubmed.ncbi.nlm.nih.gov/30043022
Autor:
Elvira Fortunato, Zhen Wang, Guoxia Liu, You Meng, Chunfeng Wang, Youchao Cui, Rodrigo Martins, Fukai Shan
Publikováno v:
Nanoscale
Recently, metal oxide nanofibers fabricated by electrospinning have been considered as promising components for next-generation electronic devices. Unfortunately, the nanofiber-based electronic devices usually exhibited inferior electrical performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cac9a77dedd8a7e742332e8481090da
Autor:
Fukai Shan, Zhen Wang, Youchao Cui, Guoxia Liu, Byoung-Chul Shin, Chao Wang, Zhijie Xin, Chunfeng Wang
Publikováno v:
Journal of Physics D: Applied Physics. 53:015109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500d5eae28dc1fe9f487e37d9bb8e082
https://doi.org/10.1088/1361-6463/ab47b2
https://doi.org/10.1088/1361-6463/ab47b2
Autor:
You Meng, Guoxia Liu, Zhuodong Li, Byoungchul Shin, Fukai Shan, Zhao Yao, Youchao Cui, Chao Wang
Publikováno v:
Journal of Physics D: Applied Physics. 52:225102
Recently, indium oxide (In2O3) semiconducting nanowires (NWs) have been extensively explored as building blocks for numerous electronic applications. However, most of the field-effect transistors (FETs) based on In2O3 NWs were operated in depletion m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba80b348fc600ad1438d2d06be40a2a
https://doi.org/10.1088/1361-6463/ab0de2
https://doi.org/10.1088/1361-6463/ab0de2
Autor:
Zhen Wang, Zhijie Xin, Youchao Cui, Chao Wang, Chunfeng Wang, Byoungchul Shin, Guoxia Liu, Fukai Shan
Publikováno v:
Journal of Physics D: Applied Physics; 1/2/2020, Vol. 53 Issue 1, p1-1, 1p