Zobrazeno 1 - 10
of 23
pro vyhledávání: '"You-Seok Suh"'
Autor:
You-Seok Suh, Dae-Gyu Park
Publikováno v:
Journal of Applied Physics; 3/15/2000, Vol. 87 Issue 6, p2760, 5p, 2 Black and White Photographs, 1 Chart, 5 Graphs
Publikováno v:
Thin Solid Films. 450:341-345
We have investigated the stress behaviors and a mechanism of void formation in TiSix films during annealing. TiSix thin films were prepared by DC magnetron sputtering using a TiSi2.1 target in the substrate temperature range of 200–500 °C. The as-
Publikováno v:
Journal of Electronic Materials. 30:1493-1498
In this work, we have studied the electrical and thermal stability of Ru and RuO2 electrodes on ZrO2 and Zr-silicate dielectrics. Very low resistivity Ru and rutile stoichiometric RuO2 films, deposited by reactive sputtering, were evaluated as gate e
Publikováno v:
IEEE Electron Device Letters. 24:439-441
In this letter, the effect of silicon and nitrogen on the electrical properties of TaSi/sub x/N/sub y/ gate electrode were investigated. The TaSi/sub x/N/sub y/ films were deposited on SiO/sub 2/ using reactive cosputtering of Ta and Si target in Ar
Publikováno v:
Applied Physics Letters. 80:1403-1405
In this letter, the Fowler–Nordheim tunneling in TaSixNy/SiO2/p-Si structures has been analyzed. The effective barrier height at the metal–oxide interface was extracted by Fowler–Nordheim current analysis. The barrier height was found to increa
Publikováno v:
IEEE International Electron Devices Meeting 2003.
Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/s
Publikováno v:
Digest. International Electron Devices Meeting.
This paper describes a metal gate process, which provides tunable work function values and ease of integration for dual metal gate process flow. Vertical stacks of Ru and Ta layers were subjected to high temperature anneals to promote intermixing whi
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This paper describes the characteristics of binary metallic alloys of Ta and Ru for gate electrode applications. The work function of this alloy can be varied from 4.2 eV to 5.2 eV by controlling the composition thereby enabling its use in both NMOS
Autor:
Se-Aug Jang, Kwan-Yong Lim, Jin Won Park, In-Seok Yeo, Heung-Jae Cho, Tae-Kyun Kim, You-Seok Suh, Tae-Ho Cha, Jae-Sung Roh, Dae-Gyu Park, Hee-koo Yoon, Veena Misra
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This report describes thermally stable dual metal gate electrodes for surface channel Si CMOS devices. We found that the ternary metal nitrides, i.e., Ti/sub 1-x/Al/sub x/N/sub y/ (TiAlN) and TaSi/sub x/N/sub y/ (TaSiN) films, are stable up to 1000/s
Publikováno v:
MRS Proceedings. 716
In this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targ