Zobrazeno 1 - 5
of 5
pro vyhledávání: '"You-Se Kim"'
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Autor:
Sang-Hyun Joo, Jae-Hoon Jang, Jeong-Hyuk Choi, HyunWook Park, Ohsuk Kwon, Jinho Ryu, Doo-Sub Lee, Dongkyo Shim, Donghun Kwak, Kye-Hyun Kyung, Myung-Hoon Choi, Ji-Sang Lee, Jeong-Don Ihm, Sang-Won Park, Ji-Ho Cho, Kyung-Tae Kang, Jae-Woo Im, Sung-Ho Choi, Moosung Kim, Ki-Tae Park, Wook-Ghee Hahn, Seok-Min Yoon, You-Se Kim, Woopyo Jeong, Sang-Wan Nam, Dae-Seok Byeon, Sang-Won Hwang, Hyang-ja Yang, Dae-Han Kim, Hyun-Jun Yoon, In-Mo Kim, Sang-Won Shim, Young-Sun Min, Doohyun Kim
Publikováno v:
ISSCC
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die si
Publikováno v:
Thin Solid Films. 326:56-59
We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal
Autor:
An-Soo Park, Ik Joon Chang, Kye Hyun Kyung, Jongyeol Park, Chi-Weon Yoon, Moosung Kim, Kyung-Min Kang, Hoosung Kim, Wook-Ghee Hahn, You-Se Kim, Young-Ho Lim, Seokjun Ham, Byung-Gil Jeon, Sung-Won Yun, Lim Bong-Soon, Ji-Sang Lee, Young-Hyun Jun, Sang-Hyun Joo, Tae-Sung Lee, Doo-gon Kim, Jung-no Im, Yongsung Cho, Sangyong Yoon, Kyungryun Kim, Byung-Jun Min, Kihwan Choi, Seunghyuk Kwon, Joon-Suc Jang, Jae-Duk Yu, Jeong-yun Yun, Jinman Han, Jin-Young Chun, Park Il-Han, Nam-hee Lee, Dong-Su Jang, Ki-whan Song, Daeyeal Lee
Publikováno v:
ISSCC
The market growth of mobile applications such as smart phones and tablet computers has fueled the explosive demand of NAND Flash memories having high density and fast throughput. To meet such a demand, we present a 64Gb multilevel cell (MLC) NAND Fla
Publikováno v:
MRS Proceedings. 280
The effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various