Zobrazeno 1 - 10
of 24
pro vyhledávání: '"You-Sang Lee"'
Publikováno v:
Bioengineering, Vol 10, Iss 12, p 1363 (2023)
In the evolving landscape of spinal surgery, technological advancements play a pivotal role in enhancing surgical outcomes and patient experiences. This paper delves into the cutting-edge technologies underpinning endoscopic spine surgery (ESS), spec
Externí odkaz:
https://doaj.org/article/15ed9774f35743c7b977c310e383b825
Autor:
Jin-Yub Lee, Yong Hoon Kang, Dae-Yong Kim, Sang-Hoon Lee, Jong Yeol Park, Pyungmoon Jang, Yun Ho Choi, Minseok Kim, Jong Nam Baek, Jun-Yong Park, Chan-Ho Kim, Joon Young Kwak, Sang Won Hwang, You-Sang Lee, Su Chang Jeon, Yong-Taek Jeong, Jin-Kook Kim
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:507-517
High-voltage analog circuits, including a novel high-voltage regulation scheme, are presented with emphasis on low supply voltage, low power consumption, low area overhead, and low noise, which are key design metrics for implementing NAND Flash memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2113158687d1453742a6ef273d96a9
https://doi.org/10.1109/jssc.2007.914327
https://doi.org/10.1109/jssc.2007.914327
Publikováno v:
Tetrahedron. 60:9037-9042
Mono- N -alkylated octahydrobinaphthyl-2,2′-diamine (H 8 -BINAM) chiral ligands were employed in the catalytic and asymmetric oxidative coupling of methyl 3-hydroxy-2-naphthoate to the corresponding binaphthol derivative. The diamine ligand with on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f04c7ff13a7bdb766a809faa86599a53
https://doi.org/10.1016/j.tet.2004.07.086
https://doi.org/10.1016/j.tet.2004.07.086
Publikováno v:
Tetrahedron. 60:867-870
A key 1-β-methylcarbapenem intermediate is synthesized from a highly diastereoselective condensation between the titanium enolate of 2′-hydroxypropiophenone with 4-acetoxy-β-lactam followed by ozonolysis of the resulting ketone to the carboxylic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36500c4bab195a7544377283720e3511
https://doi.org/10.1016/j.tet.2003.11.048
https://doi.org/10.1016/j.tet.2003.11.048
Publikováno v:
IEEE Transactions on Electron Devices. 48:2154-2160
The device characteristics of a gradual hole injection dual-gate lateral insulated gate bipolar transistor (GHI-LIGBT) is analyzed with the experiment and two-dimensional (2-D) numerical simulation. The hole injection mechanism in the GHI-LIGBT is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d5723dfd31406d5d83613475a79c1a4
https://doi.org/10.1109/16.944210
https://doi.org/10.1109/16.944210
Publikováno v:
Microwave and Optical Technology Letters. 48:253-255
We report on design and performance of a low-power-consuming two-stage MMIC LNA using AlGaAs/GaAs pseudomorphic HEMTs with 0.25-μm T-gates. The MMIC LNA showing a noise figure of 2.55 dB with 17-dB associated gain at 5.8 GHz consumes only 18 mW, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e322be79360d2eb5f9772e340895b27b
https://doi.org/10.1002/mop.21320
https://doi.org/10.1002/mop.21320
Publikováno v:
IEEE Electron Device Letters. 23:413-415
A novel MOS-gate controlled thyristor, entitled lateral anode switched thyristor (LAST), which exhibits a high current saturation and a low turn-off time, is proposed and successfully fabricated. Experimental results show that the new LAST achieves a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec1bdc35bba17780f0c02d42abbd6f29
https://doi.org/10.1109/led.2002.1015222
https://doi.org/10.1109/led.2002.1015222
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08c5c8663a6b763c419468371f92a94
https://doi.org/10.7567/ssdm.2010.i-5-4
https://doi.org/10.7567/ssdm.2010.i-5-4
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
We have developed C-band LNAs of a very low noise and of a very low power dissipation by using a commercially standard 0.25 /spl mu/m T gate PHEMT technology. A 2-stage MMIC LNA of very low noise figure as low as 0.76 dB and gain of 16 dB at 5.4 GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e887eb6ae7cdf9af81c9b94aa267cc6
https://doi.org/10.1109/icsict.2001.982146
https://doi.org/10.1109/icsict.2001.982146
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
A new MOS-gate controlled thyristor, entitled lateral conductivity modulated thyristor (LCMT), which exhibits a high current saturation and a low turn-off time, is proposed and successfully fabricated. Experimental results show that the new LCMT achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e581060118bccc820c0622d4bc05d4ab
https://doi.org/10.1109/ispsd.2002.1016184
https://doi.org/10.1109/ispsd.2002.1016184