Zobrazeno 1 - 9
of 9
pro vyhledávání: '"You-Hang Wang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 347-352 (2016)
Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were fabricated with an atomic-layer-deposited (ALD) SiO2 buffer layer between the a-IGZO channel and the Al2O3 dielectric. Compared with the TFTs with a single Al2O3 dielectric, the a-IGZO T
Externí odkaz:
https://doaj.org/article/94f7dc31d6a247b6887d54ab377a6c0b
Publikováno v:
Microelectronic Engineering. 167:105-109
The electrical characteristics of TFTs with atomic-layer-deposited ZnO:Al (ZAO) channels have been studied in this work. By increasing Al doping concentration, the ZAO film changes from polycrystalline to amorphous, and its bandgap widens as well. Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadf4d7c30d32134d348ca1027f09a39
https://doi.org/10.1016/j.mee.2016.11.010
https://doi.org/10.1016/j.mee.2016.11.010
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 347-352 (2016)
Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were fabricated with an atomic-layer-deposited (ALD) SiO2 buffer layer between the a-IGZO channel and the Al2O3 dielectric. Compared with the TFTs with a single Al2O3 dielectric, the a-IGZO T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c1042e17b93a62b2ff313a6d7337536
https://doi.org/10.1109/jeds.2016.2574844
https://doi.org/10.1109/jeds.2016.2574844
Autor:
Hong-Liang Lu, Li-Li Zheng, Shi-Jin Ding, You-Hang Wang, Wen-Jun Liu, David Wei Zhang, Qian Ma
Publikováno v:
IEEE Transactions on Electron Devices. 63:1893-1898
High-performance thin-film transistors (TFTs) with atomic layer-deposited (ALD) ZnO channel/Al2O3 dielectric were fabricated under a maximum processing temperature of 200 °C. The effects of postannealing temperature and time on the performance of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495853b4f87c714ded415553430b39f7
https://doi.org/10.1109/ted.2016.2540679
https://doi.org/10.1109/ted.2016.2540679
Autor:
Yuanlin Song, Lingming Yang, Ru Huang, Yong Liu, Y.Y. Lin, Jingang Wu, X. P. Tian, Qingtian Zou, You-Hang Wang, Minggui Wang
Publikováno v:
IEEE Electron Device Letters. 33:89-91
The relationship between low resistance (Ron) and cell size (from 40 nm to 100 μm) is systematically investigated using a 1-Mb CuxSiyO resistive RAM (RRAM) array. To our knowledge, this is the first study to attempt such an endeavor. Spacer pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e008b4f63c8e64ad70c156dd363ed404
https://doi.org/10.1109/led.2011.2170654
https://doi.org/10.1109/led.2011.2170654
Publikováno v:
IEEE Electron Device Letters. 32:1439-1441
The complex impedance spectroscopy method associated with capacitance-voltage is employed to investigate the resistive switching behavior of the bilayer structure for the first time. The reset current is reduced by more than one order for the AlOx/WO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900c76ac096e709bdfc075585638652f
https://doi.org/10.1109/led.2011.2162055
https://doi.org/10.1109/led.2011.2162055
Publikováno v:
Chinese Physics Letters. 33:058501
High-performance thin-film transistors (TFTs) with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b64b5445ecca2b60343fcfdcdd24b05
https://doi.org/10.1088/0256-307x/33/5/058501
https://doi.org/10.1088/0256-307x/33/5/058501
Publikováno v:
IEEE Electron Device Letters. :1-1
Amorphous In–Ga–Zn–O (a-IGZO) thin-film transistor with an atomic-layer-deposited (ALD) SiO2 gate insulator was fabricated under a maximum processing temperature of 250 °C and compared with the counterpart with a plasma-enhanced chemical vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a6a1df1571abcbba9464a879a4ef7e5
https://doi.org/10.1109/led.2016.2558665
https://doi.org/10.1109/led.2016.2558665
Publikováno v:
Chinese Physics Letters; May2016, Vol. 33 Issue 5, p1-1, 1p