Zobrazeno 1 - 10
of 27
pro vyhledávání: '"You-Chen Weng"'
Autor:
Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, Cheng-Jun Huang, Yan-Kui Liang, You-Chen Weng, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 525-531 (2022)
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro
Externí odkaz:
https://doaj.org/article/f3a4607ba5154f818ba8962e4aac7995
Publikováno v:
Materials, Vol 16, Iss 9, p 3376 (2023)
A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the
Externí odkaz:
https://doaj.org/article/d7aa34633dfc40909084e32350c4a1a2
Autor:
Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2140 (2022)
Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be
Externí odkaz:
https://doaj.org/article/1e70b521f9bc477593c31e7b54c0d9b9
Publikováno v:
Materials Research Express, Vol 9, Iss 10, p 105903 (2022)
By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The
Externí odkaz:
https://doaj.org/article/b6b4171c33704bbf9a3178a2ce385a41
Autor:
You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee
Publikováno v:
Materials, Vol 15, Iss 3, p 703 (2022)
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect t
Externí odkaz:
https://doaj.org/article/a1a6379076064d88b19a957734b5f66b
Publikováno v:
Energies, Vol 14, Iss 8, p 2302 (2021)
In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requi
Externí odkaz:
https://doaj.org/article/415d255315064e7abb4ae43b88f2b90f
Autor:
You-Chen Weng, 翁祐晨
99
How to enhance the efficiency of solar cell is the most important issue in photovoltaic system. There are three major points to increase the efficiency of current Si-substrate solar cell such as (1) to reduce the recombination process, (2) to
How to enhance the efficiency of solar cell is the most important issue in photovoltaic system. There are three major points to increase the efficiency of current Si-substrate solar cell such as (1) to reduce the recombination process, (2) to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/29242279907655203095
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1025c069493b75abac9c7905ee2af4ff
https://doi.org/10.1109/led.2022.3216620
https://doi.org/10.1109/led.2022.3216620
Effect of TiN barrier layer in Cu-based Ohmic contact of AlGaN/GaN High Electron Mobility Transistor
Publikováno v:
Semiconductor Science and Technology.
Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible with Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c988904e2750b1c71eb65a6ac6a8dbe5
https://doi.org/10.1088/1361-6641/acda56
https://doi.org/10.1088/1361-6641/acda56
Autor:
Jui-Sheng Wu, You-Chen Weng, Tsung-Ying Yang, Chia-Hsun Wu, Chih-Chieh Lee, Hiroshi Iwai, Edward Yi Chang
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb4cf9ee89973fcc27879213a60e5c5
https://doi.org/10.1002/pssa.202300018
https://doi.org/10.1002/pssa.202300018